相关论文: High sensitivity silicon carbide divacancy-based t…

In the present work we have analyzed the transverse momentum spectra of charged particles in high multiplicity $pp$ collisions at LHC energies $\sqrt s $ = 5.02 and 13 TeV using the Color String Percolation Model (CSPM). For heavy ions…

Silicon carbide silicon carbide (SiC SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance of the oxide layer provide a way to better understand the oxidation process with…

High-time-resolution counters based on plastic scintillator with silicon photomultiplier (SiPM) readout have been developed for applications to high energy physics experiments for which relatively large-sized counters are required. We have…

Silicon photomultipliers (SiPMs) have a low radioactivity, compact geometry, low operation voltage, and reasonable photo-detection efficiency for vacuum ultraviolet light (VUV). Therefore it has the potential to replace photomultiplier…

Nitrogen vacancy (NV) centers in diamond are promising systems for realizing sensitive temperature sensors. Pulsed optically detected magnetic resonance (Pulsed-ODMR) is one of the ways to measure the temperature using NV centers. However,…

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…

Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a…

We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-3/2 semiconductor defect states. We illustrate this using the silicon monovacancy deep center in hexagonal SiC based…

We present ultra-thin silicon membrane thermocouple bolometers suitable for fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices are based on 40 nm-thick strain tuned single…

This work presents an industrially scalable, power-efficient and high-performance quantum magnetometer chip based on proprietary 4H-silicon carbide (SiC) technology, leveraging wafer-scale fabrication techniques to optimize V2 silicon…

Whispering gallery mode (WGM) microcavities feature ultrahigh Q-factors and small mode volumes, offering strong light-matter interactions for sensing applications. However, unmodified surfaces are weakly responsive togas-phase refractive…

Decoherence of the 795 nm $^3$H$_6$ to $^3$H$_4$ transition in 1%Tm$^{3+}$:Y$_3$Ga$_5$O$_{12}$ (Tm:YGG) is studied at temperatures as low as 1.2 K. The temperature, magnetic field, frequency, and time-scale (spectral diffusion) dependence…

The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…

Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs…

Cubic silicon carbide phonon thermal conductivity has been calculated using anharmonic phonon analysis. The atomic interaction model was built using displacement-force data obtained with the High Efficiency Configuration Space Sampling…

Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…

The analog hadron calorimeter for the International Linear Collider (ILC) of the CALICE collaboration utilized novel silicon detectors, the Sillicon Photomultipliers (SiPMs), for the detection of scintillation light coming from very small…

Wireless electromagnetic sensing is a passive, non-destructive technique for measuring physical and chemical changes through permittivity or conductivity changes. However, the readout is limited by the sensitivity of the materials, often…

The resistivity of polycrystalline chemical vapor deposition diamond sensors is studied in samples exposed to fluences relevant to the environment of the High Luminosity Large Hadron Collider. We measure the leakage current for a range of…

Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques…