相关论文: Domain Wall-Magnetic Tunnel Junction Analog Conten…

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…

The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…

Today's high-performance architectures are increasingly constrained by data movement latency and energy overhead, as the slowdown of single-core performance scaling coincides with the rise of highly data-intensive workloads. In-memory…

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…

We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…

Ferroelectric field effect transistors (FeFETs) are being actively investigated with the potential for in-memory computing (IMC) over other non-volatile memories (NVMs). Content Addressable Memories (CAMs) are a form of IMC that performs…

In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are…

Content Addressable Memories (CAMs) are considered a key-enabler for in-memory computing (IMC). IMC shows order of magnitude improvement in energy efficiency and throughput compared to traditional computing techniques. Recently, analog CAMs…

A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…

Analog content-addressable memories (aCAMs) based on memristors provide a promising pathway toward energy-efficient large-scale associative computing for Edge AI and embedded intelligence applications. They have been successfully applied to…

Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…

Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…

The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…

Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice…

In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…

Resistive random-access memory (RRAM) provides an excellent platform for analog matrix computing (AMC), enabling both matrix-vector multiplication (MVM) and the solution of matrix equations through open-loop and closed-loop circuit…

Recent breakthroughs in associative memories suggest that silicon memories are coming closer to human memories, especially for memristive Content Addressable Memories (CAMs) which are capable to read and write in analog values. However, the…

Analog processing-using-memory (PUM; a.k.a. in-memory computing) makes use of electrical interactions inside memory arrays to perform bulk matrix-vector multiplication (MVM) operations. However, many popular matrix-based kernels need to…

Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…

Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, non-volatile magnetic…