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相关论文: Mott transition in the Hubbard model on anisotropi…

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Motivated by the possibility of a strain tuning effect on electronic properties of graphene, the semimetal-Mott insulator transition process on the uniaxial honeycomb lattice is numerically studied using Determinant Quantum Monte Carlo. As…

强关联电子 · 物理学 2021-09-24 Lufeng Zhang , Chi Ma , Tianxing Ma

We propose a two-orbital Hubbard model on an emergent honeycomb lattice to describe the low-energy physics of twisted bilayer graphene. Our model provides a theoretical basis for studying metal-insulator transition, Landau level degeneracy…

强关联电子 · 物理学 2018-07-31 Noah F. Q. Yuan , Liang Fu

Inspired by recent discovery of correlated insulating states in twisted bilayer graphene (TBG), we study a two-orbital Hubbard model on the honeycomb lattice with two electrons per unit cell. Based on the real-space density matrix…

强关联电子 · 物理学 2019-08-28 Zheng Zhu , D. N. Sheng , Liang Fu

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue

We study the magnetic properties of graphene edges and graphene/graphane interfaces under the influence of electrostatic gates. For this, an effective low-energy theory for the edge states, which is derived from the Hubbard model of the…

介观与纳米尺度物理 · 物理学 2011-08-23 Manuel J. Schmidt , Daniel Loss

We study the temperature dependent magnetic susceptibility of a strained graphene quantum dot by using the determinant quantum Monte Carlo method. Within the Hubbard model on a honeycomb lattice, our unbiased numerical results show that a…

强关联电子 · 物理学 2015-02-13 Shuai Cheng , Jinming Yu , Tianxing Ma , N. M. R. Peres

Controlling the metal-insulator transition in graphene-based material is a crucial topic as it directly impacts its potential applications. Inspired by recent experiments, we study the effects of doping and bond disorder on metal-insulator…

强关联电子 · 物理学 2024-01-24 Kaiyi Guo , Ying Liang , Tianxing Ma

We investigate the Mott transition in the anisotropic kagom\'e lattice Hubbard model using the cellular dynamical mean field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the…

强关联电子 · 物理学 2015-05-19 Yuta Furukawa , Takuma Ohashi , Yohta Koyama , Norio Kawakami

We investigate the role of the bandwidth difference in the Mott metal-insulator transition of a two-band Hubbard model in the limit of infinite dimensions, by means of a Gutzwiller variational wave function as well as by dynamical…

强关联电子 · 物理学 2007-05-23 Michel Ferrero , Federico Becca , Michele Fabrizio , Massimo Capone

Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the…

强关联电子 · 物理学 2020-04-22 Wanying Chen , Yonghuan Chu , Tongyun Huang , Tianxing Ma

We study the Anderson disordered Hubbard model on the honeycomb lattice. The Hubbard term is han- dled with strong-coupling perturbation theory which encodes the Mott transition physics into a rich dynamical structure of a local…

强关联电子 · 物理学 2018-12-06 Alireza Habibi , Elaheh Adibi , S. A. Jafari

Nodal-line semimetals (NLSMs) harbor a variety of novel physical properties owing to the particularities of the band degeneracies that characterize the spectrum of these materials. In symmetry-enforced NLSMs, band degeneracies, being…

强关联电子 · 物理学 2025-08-22 Andressa R. Medeiros-Silva , Mariana Malard , Rodrigo G. Pereira , Thereza Paiva

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…

强关联电子 · 物理学 2015-05-14 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

Disorder and doping have profound effects on the intrinsic physical mechanisms of superconductivity. In this paper, we employed the determinant quantum Monte Carlo method to investigate the symmetry-allowed superconducting orders on the…

超导电性 · 物理学 2024-08-15 Kaiyi Guo , Yue Zhang , Ying Liang , Tianxing Ma

We create an artificial graphene system with tunable interactions and study the crossover from metallic to Mott insulating regimes, both in isolated and coupled two-dimensional honeycomb layers. The artificial graphene consists of a…

The Hubbard model on the honeycomb lattice undergoes a quantum phase transition from a semimetallic to a Mott insulating phase and from a disordered to an anti-ferromagnetically phase. We show that these transitions occur simultaneously and…

强关联电子 · 物理学 2022-07-26 Johann Ostmeyer , Evan Berkowitz , Stefan Krieg , Timo A. Lähde , Thomas Luu , Carsten Urbach

We study the magnetization of square and hexagonal graphene dots. It is shown that two classes of hexagonal dots have a second order phase transition at a critical Hubbard energy $U$, whoose value is similar to the one in bulk graphene,…

介观与纳米尺度物理 · 物理学 2009-12-30 J. Viana-Gomes , Vitor M. Pereira , N. M. R. Peres

We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…

强关联电子 · 物理学 2011-09-02 Yejun Feng , R. Jaramillo , A. Banerjee , J. M. Honig , T. F. Rosenbaum

The possible emergence of a spin liquid phase in the half-filled Hubbard model on the honeycomb lattice; a simple model of graphene, is studied using the variational cluster approximation. We found that the critical interaction strength of…

强关联电子 · 物理学 2017-02-24 Atsushi Yamada

Creating heterostructures with graphene/graphite is a practical method for charge-doping $\alpha$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy…

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