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It has been demonstrated that the switching of perpendicular magnetization can be achieved with spin orbit torque (SOT) at an ultrafast speed and low energy consumption. However, to make the switching deterministic, an undesirable magnetic…

In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model…

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…

Nonvolatile devices based on the spin-orbit torque (SOT) mechanism are highly suitable for in-memory logic operations. The current objective is to enhance the memory density of memory cells while performing logic operations within the same…

In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their…

In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose Spin-Transfer Torque Compute-in-Memory (STT-CiM), a design for in-memory computing with Spin-Transfer…

Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions.…

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their…

The slowing down of Moore's Law has led to a crisis as the computing workloads of Artificial Intelligence (AI) algorithms continue skyrocketing. There is an urgent need for scalable and energy-efficient hardware catering to the unique…

Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…

Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…

Modern autonomous systems are driving the critical need for next-generation adaptive materials and structures with embodied intelligence, i.e., the embodiment of memory, perception, learning, and decision-making within the mechanical…

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching…

We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers.…