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Magnetic barriers in graphene are not easily tunable. However, introducing both electric and magnetic fields, provides tunable and far more controllable electronic states in graphene. Here we study such systems. A one-dimensional channel…

介观与纳米尺度物理 · 物理学 2010-02-09 Yury P. Bliokh , Valentin Freilikher , Franco Nori

We derive the angular generation density of photoexcited carriers in gapless and gapped Bernal bilayer graphene. Exploiting the strong anisotropy of the band structure of bilayer graphene at low energies due to trigonal warping, we show…

介观与纳米尺度物理 · 物理学 2024-09-16 T. J. Osborne , M. E. Portnoi , E. Mariani

Electrons in two-dimensional materials possess an additional quantum attribute, the valley pseudospin, labelled as $\mathbf{K}$ and $\mathbf{K}^{\prime}$ -- analogous to the spin up and spin down. The majority of research to achieve…

光学 · 物理学 2023-06-06 Navdeep Rana , Gopal Dixit

The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…

介观与纳米尺度物理 · 物理学 2022-11-01 Angelika Knothe , Leonid I. Glazman , Vladimir I. Fal'ko

Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…

介观与纳米尺度物理 · 物理学 2021-09-13 Md. S. Hossain , M. K. Ma , K. A. Villegas Rosales , Y. J. Chung , L. N. Pfeiffer , K. W. West , K. W. Baldwin , M. Shayegan

Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (VGS) are proposed, which can be achieved in valleytronic…

材料科学 · 物理学 2023-02-07 San-Dong Guo , Yu-Ling Tao , Guang-Zhao Wang , Shaobo Chen , Yee Sin Ang

The generation of valley current is a fundamental goal in graphene valleytronics but no practical ways of its realization are known yet. We propose a workable scheme for the generation of bulk valley current in a graphene mechanical…

介观与纳米尺度物理 · 物理学 2013-01-25 Yongjin Jiang , Tony Low , Kai Chang , Mikhai I. Katsnelson , Francisco Guinea

We present electronic structure and quantum transport calculations that predict conducting channels induced in graphene quantum dots by lines of adsorbed hydrogen atoms to function as highly efficient, experimentally realizable valley…

介观与纳米尺度物理 · 物理学 2019-09-30 Mohammadhadi Azari , George Kirczenow

Realizations of some topological phases in two-dimensional systems rely on the challenge of jointly incorporating spin-orbit and magnetic exchange interactions. Here, we predict the formation and control of a fully valley-polarized quantum…

介观与纳米尺度物理 · 物理学 2021-10-25 Marc Vila , Jose H. Garcia , Stephan Roche

Achieving a population imbalance between the two inequivalent valleys is a critical first step for any valleytronic device. A valley-polarization can be induced in biased bilayer graphene using circularly polarized light. In this paper, we…

介观与纳米尺度物理 · 物理学 2021-02-17 Alex Friedlan , Marc M. Dignam

Introducing quantum confinement has uncovered a rich set of interesting quantum phenomena and allows one to directly probe the physics of confined (quasi-)particles. In most experiments, however, electrostatic potential is the only…

介观与纳米尺度物理 · 物理学 2024-03-08 Ya-Ning Ren , Yu-Chen Zhuang , Qing-Feng Sun , Lin He

Bilayer graphene is a nanomaterial that allows for well-defined, separated quantum states to be defined by electrostatic gating and, therefore, provides an attractive platform to construct tunable quantum dots. When a magnetic field…

介观与纳米尺度物理 · 物理学 2022-12-23 Jozef Bucko , Frank Schäfer , František Herman , Rebekka Garreis , Chuyao Tong , Annika Kurzmann , Thomas Ihn , Eliska Greplova

Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves…

介观与纳米尺度物理 · 物理学 2023-12-01 Chih-Piao Chuu , Wei-En Tseng , Kuan-Hung Liu , Ching-Ming Wei , Mei-Yin Chou

We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting…

介观与纳米尺度物理 · 物理学 2020-09-02 Tao Hou , Yafei Ren , Yujie Quan , Jeil Jung , Wei Ren , Zhenhua Qiao

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital…

We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is…

材料科学 · 物理学 2011-03-31 Antonio Hill , Andreas Sinner , Klaus Ziegler

Quantum manipulation of valleys in bilayer graphene is investigated. We establish an effective Schrodinger model, and identify two key mechanisms for valley manipulation - band structure warping and generalized valley-orbit interaction.…

介观与纳米尺度物理 · 物理学 2013-02-07 G. Y. Wu , N. -Y. Lue , Y. -C. Chen

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to…

介观与纳米尺度物理 · 物理学 2016-01-20 Yuya Shimazaki , Michihisa Yamamoto , Ivan V. Borzenets , Kenji Watanabe , Takashi Taniguchi , Seigo Tarucha