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As one of paradigmatic phenomena in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. By using model Hamiltonian analysis and first-principle…

介观与纳米尺度物理 · 物理学 2019-09-04 Hongyi Sun , Bowen Xia , Zhongjia Chen , Yingjie Zhang , Pengfei Liu , Qiushi Yao , Hong Tang , Yujun Zhao , Hu Xu , Qihang Liu

In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…

介观与纳米尺度物理 · 物理学 2026-05-18 Fernando Peñaranda , Fernando de Juan

Altermagnets have recently emerged as a new class of magnetic materials that combine compensated magnetic order with spin-split electronic band structures. In this work, we employ molecular beam epitaxy to grow MnTe thin films with…

Recent interest in topological nature in condensed matter physics has revealed the essential role of Berry curvature in anomalous Hall effect (AHE). However, since large Hall response originating from Berry curvature has been reported in…

强关联电子 · 物理学 2020-10-20 Kazuto Akiba , Kaisei Iwamoto , Takaaki Sato , Shingo Araki , Tatsuo C. Kobayashi

The discovery of a giant anomalous Hall effect (AHE) and its novel mechanism holds significant promise for advancing both fundamental research and practical applications. Magnetic kagome lattice materials are uniquely suited for studying…

A universal mechanism to generate chiral hinge states in the ferromagnetic axion insulator phase is proposed, which leads to an exotic transport phenomena, the quantum anomalous Hall effect (QAHE) on some particular surfaces determined by…

介观与纳米尺度物理 · 物理学 2019-06-26 Changming Yue , Yuanfeng Xu , Zhida Song , Yuan-Ming Lu , Hongming Weng , Chen Fang , Xi Dai

The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…

材料科学 · 物理学 2015-03-13 Jun Hu , Zhenyue Zhu , Ruqian Wu

We theoretically demonstrate that the in-plane magnetization induced quantum anomalous Hall effect (QAHE) can be realized in atomic crystal layers of group-V elements with buckled honeycomb lattice. We first construct a general…

介观与纳米尺度物理 · 物理学 2017-12-20 Peichen ZHong , Yafei Ren , Yulei Han , Liyuan Zhang , Zhenhua Qiao

We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low…

介观与纳米尺度物理 · 物理学 2015-06-23 Zhiyong Wang , Chi Tang , Raymond Sachs , Yafis Barlas , Jing Shi

Topological materials ranging from topological insulators to Weyl and Dirac semimetals form one of the most exciting current fields in condensed-matter research. Many half-Heusler compounds, RPtBi (R= rare earth) have been theoretically…

We have investigated magnetotransport properties and the topological electronic structure of the half-Heusler compound TbPtBi. Our experiments reveal an exceptionally large anomalous Hall effect (AHE) in the canted antiferromagnetic state…

介观与纳米尺度物理 · 物理学 2020-05-28 Yanglin Zhu , Bahadur Singh , Yu Wang , Cheng-Yi Huang , Wei-Chi Chiu , Baokai Wang , David Graf , Yubo Zhang , Hsin Lin , Jianwei Sun , Arun Bansil , Zhiqiang Mao

Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…

材料科学 · 物理学 2016-06-29 Yongxi Ou , Shengjie Shi , D. C. Ralph , R. A. Buhrman

The anomalous Hall effect (AHE) can appear in certain antiferromagnetic metals when it is allowed by symmetry. Since the net magnetization is usually small in such anomalous Hall antiferromagnets, it is useful to have other physical…

材料科学 · 物理学 2022-07-22 Hua Chen

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…

The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE (under magnetic field reversal) as an intriguing…

材料科学 · 物理学 2025-11-27 W. J. Qin , B. Yang , Y. Z. Tian , B. W. Zheng , K. Y. Wang , B. Y. Huang , Y. B. Yang , W. Q. Zou , D. Wu , P. Wang

The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially…

Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…

介观与纳米尺度物理 · 物理学 2023-01-04 Wen-Bo Dai , Hailong Li , Dong-Hui Xu , Chui-Zhen Chen , X. C. Xie

The large magnetic anisotropy in the layered ferromagnet Fe_{1/4}TaS_2 leads to very sharp reversals of the magnetization $\bf M$ at the coercive field. We have exploited this feature to measure the anomalous Hall effect (AHE), focussing on…

强关联电子 · 物理学 2009-11-13 J. G. Checkelsky , Minhyea Lee , E. Morosan , R. J. Cava , N. P. Ong

Moir\'e materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct…

As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome…

强关联电子 · 物理学 2021-07-14 F. H. Yu , T. Wu , Z. Y. Wang , B. Lei , W. Z. Zhuo , J. J. Ying , X. H. Chen