相关论文: Phase transformation-induced superconducting alumi…

We have fabricated disordered superconducting nanowires of molybdenium silicide. A molybdenium nanowire is first deposited on top of silicon, and the alloy is formed by rapid thermal annealing. The method allows tuning of the crystal growth…

We present the fabrication and characterization of transmon qubits formed from aluminum Josephson junctions on two different silicon-based substrates: (i) high-resistivity silicon (Si) and (ii) silicon-on-insulator (SOI). Key to the qubit…

Employing amorphous superconductors, such as Type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and…

Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for…

Nodal-line semimetals are topologically non-trivial states of matter featuring band crossings along a closed curve, i.e. nodal-line, in momentum space. Through a detailed analysis of the electronic structure, we show for the first time that…

NaAlSi is an sp electron superconductor crystallizing in a layered structure of the anti-PbFCl type with a relatively high transition temperature Tc of ~7 K. Recent electronic state calculations revealed the presence of topological nodal…

We report superconductivity in quasi-1D nanostructures created at the LaAlO3/SrTiO3 interface. Nanostructures having line widths w~10 nm are formed from the parent two-dimensional electron liquid using conductive atomic force microscope…

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible…

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…

The electronic structures of zig-zag and arm-chair single-walled carbon nanotubes interacting with a transitional-metal atomic nanowire of Ni have been determined. The Ni nanowire creates a large electron density of states (DOS)at the Fermi…

We have fabricated crystalline nanowires of VO_2 using a new synthetic method. A nanowire synthesized at 650^oC shows the semiconducting behavior and a nanowire at 670^oC exhibits the first-order metal-insulator transition which is not the…

Altermagnets (AMs), characterized by zero net magnetization and momentum-dependent spin splitting, are anticipated to hold significant potential for generating multiple exotic and uncommon superconducting states. However, superconductivity…

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-orbit interaction (SOI) are at this time the most promising candidates for the realization of topological quantum information processing. In current…

Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…

Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which…

Nodal-line superconductor NaAlSi with a transition temperature ($T_c$) of 7 K has attracted considerable attention in recent years, whereas its Ge counterpart, NaAlGe, does not superconduct down to the lowest temperature regardless of their…

Below a certain temperature Tc (typically cryogenic), some materials lose their electric resistance R entering a superconducting state. Folowing the general trend toward a large scale integration of a greater number of electronic…

Diamond Si is a semiconductor with an indirect band gap that is the basis of modern semiconductor technology. Although many metastable forms of Si were observed using diamond anvil cells for compression and chemical precursors for…

We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires…

We report on the fabrication and measurements of a superconducting junction of a single-crystalline Au nanowire, connected to Al electrodes. Current-Voltage characteristic curve shows clear supercurrent branch below the superconducting…