相关论文: Theoretical and experimental study on Noise Equiva…
GaAs-based light-emitting diodes (LEDs) are commonly employed in a variety of applications, including medical imaging, biosensing, optical communications, and night vision. In this paper, we present an alternative application of GaAs-based…
X-ray refraction and absorption by neon atoms under the influence of an 800 nm laser with an intensity of 10^13 W/cm^2 is investigated. For this purpose, we use an ab initio theory suitable for optical strong-field problems. Its results are…
The advent of isolated and intense sub-femtosecond X-ray pulses enables tracking of quantummechanical motion of electrons in molecules and solids. The combination of X-ray spectroscopy and diffraction imaging is a powerful approach to…
We investigated the complex index of refraction in the x-ray regime of atoms in laser light. The laser (intensity up to 10^13 W/cm^2, wavelength 800nm) modifies the atomic states but, by assumption, does not excite or ionize the atoms in…
The hyperspectral X-ray imaging has been long sought in various fields from material analysis to medical diagnosis. Here we propose a new semiconductor detector structure to realize energy-resolved imaging at potentially low cost. The…
The values of the signal-to-noise ratio are determined, at which the method of processing X-ray diffraction data reveals reflections with intensity less than the noise component of the background. The possibilities of the method are…
A theoretical study of Al(1-x)Ga(x)N, based on full-potential linearized augmented plane wave method, is used to investigate the variations in the bandgap, optical properties and non-linear behavior of the compound with the variation of Ga…
Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the…
We present an experimental method to determine the refractive index of $Al_{x}Ga_{1-x}As$ (x = 0.0 - 0.5) from 300 K to 4 K across the 500 - 1100 nm wavelength range. The values are extracted from spectroscopically observed microcavity…
We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…
Diffraction-before-destruction imaging with single ultrashort X-ray pulses has the potential to visualise non-equilibrium processes, such as chemical reactions, at the nanoscale with sub-femtosecond resolution in the native environment…
This paper reports on the demonstration of a high-rate energy measurement technique using a thin depletion layer silicon avalanche photodiode (Si-APD). A dedicated amplitude-to-time converter is developed to realize simultaneous energy and…
Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive…
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-ray diffraction is extensively used to evaluate the crystalline quality, the chemical composition and the residual strain in…
Modern x-ray free-electron lasers (XFELs) produce x-ray pulses of exceptional transverse coherence. This is due largely to the process of optical guiding by which the radiation is both refractively guided by the bunched electron beam and…
We developed a fast X-ray detector system for nuclear resonant scattering (NRS) experiments. Our system employs silicon avalanche photo-diode (Si-APD) as a fast X-ray sensor. The system is able to acquire both timing and energy of a single…
Rigourous calculations of the imaging properties of metamaterials consisting of metal-coated semiconductor nanoparticles are presented. In particular, it is shown that under proper choice of geometric and materials parameters, arrays of…
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…
Cadmium telluride (CdTe), lead sulfide (PbS), and indium tin oxide (ITO) play crucial roles in various electronic applications where laser treatment enables precise modification of their distinctive electronic characteristics. This study…
We present ultrafast x-ray diffraction experiments on thin films of metallic SrRuO$_3$ (SRO) after their excitation with ultrashort intense laser pulses. Depending on the layer thickness, the data exhibit a transient splitting of the (002)…