相关论文: Dynamic negative capacitance regime in GeTe Rashba…
Field variation of heat capacity at fixed temperatures is investigated to identify the origin of the field induced first order phase transition in polycrystalline Ce(Fe$_{0.094}$Al$_{0.04}$)$_2$ sample. The heat capacity at 4.5K and 3.5K…
Electronic properties of FeSe can be tuned by various routes. Here, we present a comprehensive study on the evolution of the superconductivity and nematicity in FeSe with thickness from bulk single crystal down to bilayer ($\sim$ 1.1 nm)…
Electrical resistivity as a function of temperature, pressure, and magnetic field was measured in high and low purity single crystals of BaVS$_3$ close to the critical pressure value $p_{cr}$$\approx$2 GPa, associated with the zero…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of the gate dielectric permittivity, spacer oxide permittivity,…
Although there are enormous numbers of high-temperature thermoelectric materials present, designing a near-room-temperature especially n-type thermoelectric material with high zT is extremely challenging. Generally, pristine Ag2Se exhibits…
We study the vortex dynamics in high-quality FeTe$_{0.6}$Se$_{0.4}$ single crystal by performing magnetization measurements of the screening current density \emph{J}$_s$ and flux creep rate \emph{S}. Temperature dependence of \emph{S} shows…
In this report, we study ultra-high-mobility two-dimensional (2D) electron/hole systems with high precision capacitance measurement. We find that the capacitance charge appears only at the fringe of the gate at high magnetic field when the…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
We observe an interesting scenario of field induced metastabilities in the resistivity measurements. The resistivity exhibits a bifurcation of zero-field cooled and field-cooled (FC) temperature dependence below the paramagnetic to…
Silicon nanowires (Si NW) are ideal candidates for solution processable field effect transistors (FETs). The interface between the nanowire channel and the gate dielectric plays a crucial role in the FET performance, and it can be…
Typical ferroelectrics possess a large spontaneous polarization Ps but simultaneously a large remnant polarization Pr as well, resulting in an inferior energy storage density.A mechanism that can reduce the Pr while maintain the Ps is…
Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We…
Infrared reflectance measurements were made with light polarized along the a- and c-axis of both superconducting and antiferromagnetic phases of electron doped Nd$_{1.85}$Ce$_{.15}$CuO$_{4+\delta}$. The results are compared to…
We report very low temperature magnetoconductance DeltaG measurements on graphene devices with the magnetic field H applied parallel to the carbon sheet. The DeltaG(H) signal depends on the gate voltage Vg and its sign is related with the…
High pressure electrical resistivity and x-ray diffraction experiments have been performed on Fe single crystals. The crystallographic investigation provides direct evidence that in the martensitic $bcc \rightarrow hcp$ transition at 14 GPa…
We present novel hysteretic behaviour of a three-level ladder atomic system exhibiting double-cavity optical bistability in the mean-field limit. The two fields coupling the atomic system experience feedback via two independent,…
Quasiparticle excitations in FeSe were studied by means of specific heat ($C$) measurements on a high-quality single crystal under rotating magnetic fields. The field dependence of $C$ shows three-stage behavior with different slopes,…
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended…
$\beta$-Ag$_2$Se is a promising material for room temperature thermoelectric applications and magneto-resistive sensors. However, no attention was paid earlier to the hysteresis in the temperature dependence of resistivity ($\rho$($T$)).…