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The carrier type and density in Bi2Se3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ~1x1017 cm-3 which corresponds to ~25 meV in the Fermi energy is obtained in both n- and p-type…

材料科学 · 物理学 2015-05-19 Zhiyong Wang , Tao Lin , Peng Wei , Xinfei Liu , Randy Dumas , Kai Liu , Jing Shi

We measured the in-plane optical conductivity of a nearly optimally doped (Ba,K)Fe2As2 single crystal with Tc = 39.1 K. Upon entering the superconducting state the optical conductivity below ~20 meV vanishes, strongly suggesting a fully…

超导电性 · 物理学 2015-01-09 Y. M. Dai , B. Xu , B. Shen , H. H. Wen , X. G. Qiu , R. P. S. M. Lobo

The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is…

Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…

The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples…

超导电性 · 物理学 2015-06-17 Mario Novak , Satoshi Sasaki , Markus Kriener , Kouji Segawa , Yoichi Ando

The Seebeck coefficient (thermopower) $S$ of the cuprate superconductor La$_{1.6-x}$Nd$_{0.4}$Sr$_x$CuO$_4$ was measured across its doping phase diagram (from $p = 0.12$ to $p = 0.25$), at various temperatures down to $T \simeq 2$ K, in the…

The characteristic features of Ca$_{10}$(Pt$_3$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ ("10-3-8") superconductor are relatively high anisotropy and a clear separation of superconductivity and structural/magnetic transitions, which allows…

超导电性 · 物理学 2012-04-11 K. Cho , M. A. Tanatar , H. Kim , W. E. Straszheim , N. Ni , R. J. Cava , R. Prozorov

The specific heat $C$ of the single-layer cuprate superconductor HgBa$_2$CuO$_{4 + \delta}$ was measured in an underdoped crystal with $T_{\rm c} = 72$ K at temperatures down to $2$ K in magnetic fields up to $35$ T, a field large enough to…

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however…

GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless characterization of doping with nanometer scale resolution. Here,…

Two single crystalline samples with the same nominal composition of Rb0.8Fe2Se2 prepared via slightly different precursor routes under the same thermal processing conditions were investigated at ambient and high pressures. One sample was…

超导电性 · 物理学 2012-07-18 M. Gooch , B. Lv , L. Z. Deng , T. Muramatsu , J. Meen , Y. Y. Xue , B. Lorenz , C. W. Chu

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…

The Nernst effect was measured in the electron-doped cuprate superconductor Pr2-xCexCuO4 (PCCO) at four concentrations, from underdoped (x=0.13) to overdoped (x=0.17), for a wide range of temperatures above the critical temperature Tc. A…

超导电性 · 物理学 2015-06-19 F. F. Tafti , F. Laliberte , M. Dion , J. Gaudet , P. Fournier , Louis Taillefer

Guided by the internal-reference rule and the known band offsets in III-V and II-VI diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as…

材料科学 · 物理学 2007-05-23 J. Blinowski , P. Kacman , T. Dietl

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while…

Here we report the effect of structural and superconductivity properties on Ru doped CuIr2Te4 telluride chalcogenide. XRD results suggest that the CuIr2-xRuxTe4 maintain the disordered trigonal structure with space group P3m1 (No. 164) for…

One of the most widely discussed features of the cuprate high Tc superconductors is the presence of a pseudogap in the normal state. Recent transport and specific heat measurements have revealed an abrupt transition at the pseudogap…

超导电性 · 物理学 2021-11-22 B. Michon , A. B. Kuzmenko , M. K. Tran , B. McElfresh , S. Komiya , S. Ono , S. Uchida , D. van der Marel

To reduce the prominent VOC-deficit that limits kesterite-based solar cells efficiencies, Ge has been proposed over the recent years with encouraging results, as the reduction of the non-radiative recombination rate is considered as a way…

材料科学 · 物理学 2022-02-22 Thomas Ratz , Ngoc Duy Nguyen , Guy Brammertz , Bart Vermang , Jean-Yves Raty