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We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

We study the half filled extended Hubbard model on a two-dimensional square lattice using cluster dynamical mean field theory on clusters of size 8-20. We show that the model exhibits metallic, Mott insulating, and charge ordered phases,…

强关联电子 · 物理学 2017-04-28 Hanna Terletska , Tianran Chen , Emanuel Gull

Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an…

强关联电子 · 物理学 2018-11-09 Hanghui Chen

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

强关联电子 · 物理学 2009-10-31 Junren Shi , X. C. Xie

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…

强关联电子 · 物理学 2018-07-11 Francesco Grandi , Adriano Amaricci , Massimo Capone , Michele Fabrizio

We investigate the metal-insulator transition (MIT) and phase diagram of the half-filled Fermi Hubbard model with Rashba-type spin-orbit coupling (SOC) on a square optical lattice. The interplay between the atomic interactions and SOC…

强关联电子 · 物理学 2015-03-13 Xin Zhang , Wei Wu , Gang Li , Lin Wen , Qing Sun , An-Chun Ji

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…

强关联电子 · 物理学 2009-11-13 Kensuke Inaba , Akihisa Koga

Using a realistic band structure for twisted WSe$_2 $ materials, we develop a theory for the interaction-driven correlated insulators to conducting metals transitions through the tuning of the filling factor around commensurate fractional…

强关联电子 · 物理学 2021-08-25 Haining Pan , Sankar Das Sarma

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…

高能物理 - 理论 · 物理学 2015-10-26 Yi Ling , Peng Liu , Chao Niu , Jian-Pin Wu

Recent investigations suggest that both spin-orbit coupling and electron correlation play very crucial roles in the $5d$ transition metal oxides. By using the generalized Gutzwiller variational method and dynamical mean-field theory with…

强关联电子 · 物理学 2015-06-12 Liang Du , Li Huang , Xi Dai

Metal to insulator transitions (MITs) driven by strong electronic correlations are common in condensed matter systems, and are associated with some of the most remarkable collective phenomena in solids, including superconductivity and…

强关联电子 · 物理学 2019-12-20 G. G. Guzmán-Verri , R. T. Brierley , P. B. Littlewood

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov
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