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We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs…

介观与纳米尺度物理 · 物理学 2015-06-17 Dong Zhang , Wenkai Lou , Maosheng Miao , Shou-cheng Zhang , Kai Chang

We study the topology and localization properties of a generalized Su-Schrieffer-Heeger (SSH) model with a quasi-periodic modulated hopping. It is found that the interplay of off-diagonal quasi-periodic modulations can induce topological…

无序系统与神经网络 · 物理学 2024-11-04 Zhanpeng Lu , Yunbo Zhang , Zhihao Xu

A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances,…

介观与纳米尺度物理 · 物理学 2020-09-17 Chang Liu , Dimitrie Culcer , Mark T. Edmonds , Michael S. Fuhrer

We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…

In this paper we argue that the electron skew-scattering on paramagnetic impurities in non-magnetic systems, such as bulk semiconductors, possesses a remarkable fingerprint allowing to differentiate it directly from other microscopic…

其他凝聚态物理 · 物理学 2021-02-24 M. A. Rakitskii , K. S. Denisov , I. V. Rozhansky , N. S. Averkiev

We study transport properties of the helical edge states of two-dimensional integer and fractional topological insulators via double constrictions. Such constrictions couple the upper and lower edges of the sample, and can be made and tuned…

强关联电子 · 物理学 2013-09-25 Chia-Wei Huang , Sam T. Carr , Dmitri Gutman , Efrat Shimshoni , Alexander D. Mirlin

The discovery of topologically protected boundary states in topological insulators opens a new avenue toward exploring novel transport phenomena. The one-way feature of boundary states against disorders and impurities prospects great…

介观与纳米尺度物理 · 物理学 2022-01-05 Qiang Wei , Xuewei Zhang , Weiyin Deng , Jiuyang Lu , Xueqin Huang , Mou Yan , Gang Chen , Zhengyou Liu , Suotang Jia

The surface of a higher order topological insulator (HOTI) comprises a two-dimensional topological insulator (TI) with broken inversion symmetry, whose mass is determined by the microscopic details of the surface such as surface potentials…

介观与纳米尺度物理 · 物理学 2019-07-24 Raquel Queiroz , Ady Stern

We consider a four-terminal setup of a two-dimensional topological insulator (quantum spin Hall insulator) with local tunneling between the upper and lower edges. The edge modes are modeled as helical Luttinger liquids and the…

强关联电子 · 物理学 2011-08-30 Thomas L. Schmidt

We analyze the current and the shot-noise of an electron interferometer made of the helical edge states of a two-dimensional topological insulator within the framework of non-equilibrium Green's functions formalism. We study in detail…

介观与纳米尺度物理 · 物理学 2013-11-18 Bruno Rizzo , Liliana Arrachea , Michael Moskalets

In the two-dimensional case the transition between ordinary and topological insulator states can be described by a massive Dirac model with the mass term changing its sign at the transition point. We theoretically investigate how such a…

介观与纳米尺度物理 · 物理学 2015-03-17 G. Tkachov , E. M. Hankiewicz

Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- ($\mathcal{T}$-) invariant (helical) 3D TCI$\unicode{x2014}$termed higher-order TCIs…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

介观与纳米尺度物理 · 物理学 2012-02-07 K. Olejnik , J. Wunderlich , A. C. Irvine , R. P. Campion , V. P. Amin , Jairo Sinova , T. Jungwirth

We study electron transport at the edge of a generic disordered two-dimensional topological insulator, where some channels are topologically protected from backscattering. Assuming the total number of channels is large, we consider the edge…

介观与纳米尺度物理 · 物理学 2016-03-08 E. Khalaf , M. A. Skvortsov , P. M. Ostrovsky

Topological insulators can be generally defined by a topological field theory with an axion angle theta of 0 or pi. In this work, we introduce the concept of fractional topological insulator defined by a fractional axion angle and show that…

强关联电子 · 物理学 2010-12-14 Joseph Maciejko , Xiao-Liang Qi , Andreas Karch , Shou-Cheng Zhang

Quantum spin Hall (QSH) insulators are materials with nontrivial topological properties, characterized by helical edge currents. In 2D strips, the application of a bias voltage along the edge generates a magnetization that can be measured…

A striking feature of time reversal symmetry (TRS) protected topological insulators (TIs) is that they are characterized by a half integer quantum Hall effect on the boundary when the surface states are gapped by time reversal breaking…

Conductors made of high-temperature (HTS) wires helically wound in one or more layers on round tubes (CORT) are compact, flexible, and can carry a large amount of current. Although these conductors were initially developed for DC…

超导电性 · 物理学 2024-02-27 Steffen Elschner , Andrej Kudymow , Nicolo Riva , Francesco Grilli

Topological insulators, along with Chern insulators and Quantum Hall insulator phases, are considered as paradigms for symmetry protected topological phases of matter. This article reports the experimental realization of the time-reversal…

介观与纳米尺度物理 · 物理学 2021-01-01 Priya Tiwari , Saurabh Kumar Srivastav , Sujay Ray , Tanmoy Das , Aveek Bid

We study coherent spin transport through helical edge states of topological insulator tunnel-coupled to metallic leads. We demonstrate that unpolarized incoming electron beam acquires finite polarization after transmission through such a…

介观与纳米尺度物理 · 物理学 2021-11-10 R. A. Niyazov , D. N. Aristov , V. Yu. Kachorovskii