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Efficient charge separation in van der Waals (vdW) heterostructures is crucial for optimizing light harvesting and detection applications. However, precise control over the microscopic pathways governing ultrafast charge transfer remains an…

介观与纳米尺度物理 · 物理学 2026-05-20 Niklas Hofmann , Johannes Gradl , Leonard Weigl , Stiven Forti , Camilla Coletti , Isabella Gierz

A variety of fabrication methods for van der Waals heterostructures have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we report few-layer van der Waals PtS2/PtSe2 heterojunction photodiodes fabricated…

介观与纳米尺度物理 · 物理学 2018-08-07 Jian Yuan , Tian sun , Zhixin Hu , Wenzhi Yu , Weiliang Ma , Kai Zhang , Qiaoliang Bao , Shu Ping Lau , Shenghuang Lin , Shaojuan Li

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…

介观与纳米尺度物理 · 物理学 2019-06-19 X. G. Croot , S. J. Pauka , H. Lu , A. C. Gossard , J. D. Watson , G. C. Gardner , S. Fallahi , M. J. Manfra , D. J. Reilly

A van der Waals heterostructure containing an atomically thin monolayer transition-metal dichalcogenide as a single-photon emitting layer is emerging as an intriguing solid-state quantum-photonic platform. Here, we report the utilization of…

应用物理 · 物理学 2024-12-03 J. Thoppil S , Y. Waheed , S. Shit , I. D. Prasad , K. Watanabe , T. Taniguchi , S. Kumar

Van der Waals heterostructures have become a rapidly growing field in condensed matter research, offering a platform to engineer novel quantum systems by stacking different two-dimensional (2D) materials. A diverse range of material…

介观与纳米尺度物理 · 物理学 2025-10-01 Bharti Matta , Philipp Rosenzweig , Craig Polley , Ulrich Starke , Kathrin Küster

Coupled electron spins in semiconductor double quantum dots hold promise as the basis for solid-state qubits. To date, most experiments have used III-V materials, in which coherence is limited by hyperfine interactions. Ge/Si…

介观与纳米尺度物理 · 物理学 2015-05-13 Yongjie Hu , Hugh H. O. Churchill , David J. Reilly , Jie Xiang , Charles M. Lieber , Charles M. Marcus

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…

Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…

Large area van der Waals (vdW) thin films are assembled materials consisting of a network of randomly stacked nanosheets. The multi-scale structure and the two-dimensional nature of the building block mean that interfaces naturally play a…

Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase even higher than graphite while its monolayer is a…

材料科学 · 物理学 2022-10-19 Changmeng Huan , Pu Wang , Bingtao Liu , Binghan He , Yongqing Cai , Qingqing Ke

Unconventional superconductors represent one of the fundamental directions in modern quantum materials research. In particular, nodal superconductors are known to appear naturally in strongly correlated systems, including cuprate…

Vertical stacking of atomically thin layered materials opens new possibilities for the fabrication of heterostructures with favorable optoelectronic properties. The combination of graphene, hexagonal boron nitride and semiconducting…

In an all-van der Waals heterostructure, the active layer, gate dielectrics and gate electrodes are assembled from two-dimensional crystals that have a low density of atomic defects. This design allows two-dimensional electron systems with…

Van der Waals (vdW) heterostructures of two-dimensional (2D) materials have become a rich playground for the exploration of correlated quantum phases, and recent studies have begun to probe their non-equilibrium dynamics under femtosecond…

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…

介观与纳米尺度物理 · 物理学 2020-05-27 A. J. Sousa de Almeida , A. Marquez Seco , T. van den Berg , B. van de Ven , F. Bruijnes , S. V. Amitonov , F. A. Zwanenburg

Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure…

The discovery of 2D materials opens up unprecedented opportunities to design new materials with specified properties. In many cases, the design guiding principle is based on one or another proximity effect, i.e. the nanoscale-penetration of…

超导电性 · 物理学 2024-10-22 G. A. Bobkov , K. A. Bokai , M. M. Otrokov , A. M. Bobkov , I. V. Bobkova

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride,…

Quantum sensing of meV-scale scattering and absorption of impinging particles with electrons in solid state detectors is a challenging technological advancement with the potential to enable breakthroughs in quantum information applications…

材料科学 · 物理学 2026-03-17 Elizabeth A. Peterson

The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed…