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Van der Waals heterostructures have become a rapidly growing field in condensed matter research, offering a platform to engineer novel quantum systems by stacking different two-dimensional (2D) materials. A diverse range of material…

介观与纳米尺度物理 · 物理学 2025-10-01 Bharti Matta , Philipp Rosenzweig , Craig Polley , Ulrich Starke , Kathrin Küster

We use anhydrous ferric chloride (FeCl3) to intercalate graphite flakes consisting of 2 to 4 graphene layers and to dope graphene monolayers. The intercalant, staging, stability and doping of the resulting intercalation compounds (ICs) are…

材料科学 · 物理学 2011-06-07 W. J. Zhao , P. H. Tan , J. Liu , A. C. Ferrari

Intercalation at the graphene/SiC interface provides a controlled route to stabilize atomically thin layers with properties distinct from their bulk counterparts. In this platform, the structure and stability of the intercalated phase…

Epitaxial graphene on SiC(0001) suffers from strong intrinsic n-type doping. We demonstrate that the excess negative charge can be fully compensated by non-covalently functionalizing graphene with the strong electron acceptor…

We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with…

It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge…

介观与纳米尺度物理 · 物理学 2019-05-22 Rahul Rao , Ahmad E. Islam , Simranjeet Singh , Rajiv Berry , Roland K Kawakami , Benji Maruyama , Jyoti Katoch

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been…

Heavily doping graphene by intercalation can raise its Fermi level near an extended van Hove singularity, potentially inducing correlated electronic phases. Intercalation also modifies the band structure: dopants may hybridize with carbon…

Tuning the charge carrier density of two-dimensional (2D) materials by incorporating dopants into the crystal lattice is a challenging task. An attractive alternative is the surface transfer doping by adsorption of molecules on 2D crystals,…

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…

材料科学 · 物理学 2025-01-08 Imtiaz Noor Bhatti , J. Avila , Z. Chen , A. Baron , Y. Zhang , A. Shukla , P. Dudin

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we…

We found an intrinsic redistribution of charge arises between epitaxial graphene, which has intrinsically n-type doping, and an undoped substrate. In particular, we studied in detail epitaxial graphene layers thermally elaborated on…

Two-dimensional (2D) magnetic materials integrated with graphene offer a compelling platform for next-generation spintronic devices, yet nickel in its 2D form remains largely unexplored, due to fundamental synthesis limitations. Here, we…

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming…

介观与纳米尺度物理 · 物理学 2011-07-26 Bing Huang , Hongjun Xiang , Su-Huai Wei

Van der Waals heterostuctures, made from stacks of two-dimensional materials, exhibit unique light-matter interactions and are promising for novel optoelectronic devices. The performance of such devices is governed by near-field coupling…

介观与纳米尺度物理 · 物理学 2018-01-23 Guillaume Froehlicher , Etienne Lorchat , Stéphane Berciaud

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties, and the…

介观与纳米尺度物理 · 物理学 2016-02-17 L. Ju , J. Velasco , E. Huang , S. Kahn , C. Nosiglia , H. Tsai , W. Yang , T. Taniguchi , K. Watanabe , Y. Zhang , G. Zhang , M. Crommie , A. Zettl , F. Wang

The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy…

材料科学 · 物理学 2021-09-14 Juan Lv , Jing Pei , Yuzheng Guo , Jian Gong , Huanglong Li

We have performed an {\it ab initio} theoretical investigation of graphene sheet adsorbed on amorphous SiO$_2$ surface (G/a-SiO$_2$). We find that graphene adsorbs on the a-SiO$_2$ surface through van der Waals interactions. The…

材料科学 · 物理学 2015-05-28 R. H. Miwa , T. M. Schmidt , A. Fazzio

Three-dimensional epitaxial heterostructures are based on covalently-bonded interfaces, whereas those from 2-dimensional (2D) materials exhibit van der Waals interactions. Under the right conditions, however, material structures with mixed…

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