相关论文: THz ratchet effect in HgTe interdigitated structur…
We consider a generation and an amplification of THz radiation in semiconductor superlattices under the action of microwave pump field. Electrons belonging to a single miniband of the superlattice interact quasistatically with the pump…
Thermoelectric materials, long explored for energy harvesting and thermal sensing, convert heat directly into electrical signals. Extending their application to the terahertz (THz) frequency range opens opportunities for low-noise,…
We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a…
Generation of terahertz harmonics by frequency multiplication with a semiconductor superlattice due to an excitation of relaxation oscillations by incident waves is investigated theoretically. It is shown that the relaxation oscillations…
The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…
The system of cold two-level atoms inside an optical lattice potential has been used to simulate various models encountered in fundamental and condensed-matter physics. When the optical lattice is periodically shaken, some interesting…
We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied…
't Hooft anomalies impose fundamental constraints on quantum matter and often lead to emergent symmetry structures upon gauging. We analyze a lattice model with four global symmetries realizing a mixed anomaly described by $\sim a_1\wedge…
Extremely asymmetrical scattering (EAS) is a new type of Bragg scattering in thick, slanted, periodic gratings. It is realised when the scattered wave propagates parallel to the front boundary of the grating. Its most important feature is…
Spintronic terahertz (THz) emitters (STE) based on the inverse spin Hall effect in ferromagnetic/heavy metal (FM/HM) heterostructures have become important sources for THz pulse generation. The design, materials and control of these…
Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices.…
We demonstrate using computer simulations that the simplest vortex ratchet system for type-II superconductors with artificial pinning arrays, an asymmetric one-dimensional (1D) potential array, exhibits the same features as more complicated…
The amplitude V_0 of unidirectional periodic potential modulation introduced by a surface grating into a two-dimensional electron gas (2DEG) formed at AlGaAs/GaAs heterointerface is measured as a function of electron density n_e by…
We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…
Impedance matching and heat management are important factors influencing performance of THz sources. In this work we analyze thermal and radiative properties of such devices based on mesa structures of a layered high-temperature…
The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs) is considered a milestone in the discovery of topological insulators. The QSH edge states are predicted to allow current to flow at the edges of an insulating…
We theoretically show that conditions for THz gain and conditions for formation of destructive electric domains in semiconductor superlattices are fairly different in the case of parametric generation and amplification. Action of an…
The effect of electric field on the electron resonant tunnelling into a double barrier structure is studied. We show for particular field strengths an increase of the tunnelling time which leads us to explain the Stark-ladder localization…
We analyze dynamic properties of vertical graphene-base hot-electron transistors (GB-HETs) and consider their operation as detectors of terahertz (THz) radiation using the developed device model. The GB-HET model accounts for the tunneling…
Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec…