相关论文: Electromechanical coupling in Yb-substituted III-V…

Our experiments demonstrate that alloying the cubic-phase YbN into the wurtzite-phase AlN results in clear mechanical softening and enhanced electromechanical coupling of AlN. First-principle calculations reproduce experimental results…

Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate…

Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN…

Polycrystalline Yb substituted NiZn nanoferrites with the compositions of Ni0.5Zn0.5YbxFe2-xO4 (x= 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol gel auto combustion technique. Single phase cubic spinel structure has…

Tailoring the electronic and optical properties of nitride-based alloys for optoelectronic applications in the ultraviolet and red spectral range has attracted significant attention in recent years. Adding boron nitride (BN) to indium…

A study of the mobility of n-doped wurtzite III-Nitrides is reported. We have determined the nonequilibrium thermodynamic state of the III-Nitrides systems, driven far away from equilibrium by a strong electric field, in the steady state,…

We study the dependence of macroscopic polarization on composition and strain in wurtzite III-V nitride ternary alloys using ab initio density-functional techniques. The spontaneous polarization is characterized by a large bowing, strongly…

Boron (B) containing III-nitride materials, such as wurtzite (B,Ga)N alloys, have recently attracted significant interest to tailor the electronic and optical properties of optoelectronic devices operating in the visible and ultraviolet…

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite…

The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic,…

Within the family of cubic YbCu$_4$X compounds ($X$ = Ni, Au and Zn), we have investigated the YbCu$_{5-x}$Zn$_x$ ($1\geq x \geq 0.7$) alloys by means of structural, magnetic, thermal and transport measurements. In the $\tau 1-$…

The wurtzite phase group III-Nitrides (AlN, GaN, InN) have attracted great interest due to their successful applications in the optoelectronics since the 90's. In this paper we perform a comprehensive study of AlN, GaN and InN structural…

The electronic structure and the anisotropy of the Al - N {\pi} and {\sigma} chemical bonding of wurtzite AlN has been investigated by bulk-sensitive total fluorescence yield absorption and soft x-ray emission spectroscopies. The measured N…

Aluminum nitride (AlN) is an important piezoelectric material for a wide range of applications, many efforts are devoted to improving its piezoelectric response by alloying with transition metals (TMs). In this paper, the influence of the…

The recent discovery of superconductivity in infinite layer thin films and bulk Ruddlesden-Popper nickelates has stimulated the investigation of other predicted properties of these materials. Among them, the existence of magnetism-driven…

Wurtzite ferroelectrics (e.g., $\mathrm{Al_{0.93}B_{0.07}N}$) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material advantages offered by their large remanent polarization and…

We consider the electronic structure of, and magnetic exchange (spin) interactions between, nominally nonmagnetic Eu^3+ ions (4f^6, S=3, L=3, J=0) within the context of the rocksalt structure compounds EuN and EuP. Both compounds are ionic…

The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using…

We report a comprehensive study of the low-level substitution of Mn$^{3+}$ by Fe$^{3+}$ effect on the static and dynamic magnetoelectric coupling in TbMn$_{1-x}$Fe$_x$O$_3$ ($x=0$, 0.02 and 0.04). The cationic substitution has a large…

The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over…