相关论文: Enhanced light collection from a gallium nitride c…
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased…
Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refractive index, where efficiency is limited by refraction and…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color centers in aluminum nitride, which emits close to 620 nm. We…
Outstanding wide-bandgap semiconductor material such as gallium nitride (GaN) has been extensively utilized in power electronics, radiofrequency amplifiers, and harsh environment devices. Due to its quantum confinement effect in enabling…
This study presents a comprehensive simulation-based optimization of gallium nitride (GaN)-based metal-semiconductor-metal (MSM) photodetectors designed for ultraviolet (UV) applications. The proposed device architecture incorporates a…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Achieving high crystalline quality Ge$_{1-x}$Sn$_{x}$ semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-infrared photonics. Herein, by using sub-20 nm Ge nanowires as…
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
We demonstrate the combination of a hemispherical solid immersion lens with a micro-photoluminescence setup. Two advantages introduced by the SIL, an improved resolution of 0.4 times the wavelength in vacuum and a 5 times enhancement of the…
This work presents a novel Gallium nitride (GaN) high-electron-mobility transistor (HEMT) based ultraviolet photodetector architecture integrating advanced material and structural design strategies to enhance detection performance and…
Solid-state single-photon emitters are key components for integrated quantum photonic devices. However, they can suffer from poor extraction efficiencies, caused by the large refractive index contrast between the bulk material they are…
Semiconductor quantum photonic circuits can be used to efficiently generate, manipulate, route and exploit non-classical states of light for distributed photon based quantum information technologies. In this article, we review our recent…
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum…
High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state…