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Transition metal dichalcogenide heterostructures can host interlayer excitons (IXs), which consist of electrons and holes spatially separated in different layers. IXs possess permanent dipoles and have proven to offer a wealth of novel…

材料科学 · 物理学 2021-11-24 Darien J. Morrow , Xuedan Ma

Photoexcited intralayer excitons in van der Waals heterostructures (vdWHs) with type-II band alignment have been observed to tunnel into interlayer excitons on ultrafast timescales. Such interlayer excitons have sufficiently long lifetimes…

介观与纳米尺度物理 · 物理学 2020-04-02 Høgni C. Kamban , Thomas G. Pedersen

Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena…

介观与纳米尺度物理 · 物理学 2018-05-24 E. V. Calman , M. M. Fogler , L. V. Butov , S. Hu , A. Mishchenko , A. K. Geim

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, allow implementing both quantum exciton systems and long-range exciton transport. Van der Waals heterostructures (HS) composed of atomically thin layers…

介观与纳米尺度物理 · 物理学 2024-07-09 L. H. Fowler-Gerace , Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. V. Butov

Exciton binding energies of hundreds of meV and strong light absorption in the optical frequency range make transition metal dichalcogenides (TMDs) promising for novel optoelectronic nanodevices. In particular, atomically thin TMDs can be…

介观与纳米尺度物理 · 物理学 2018-04-24 Simon Ovesen , Samuel Brem , Christopher Linderälv , Mikael Kuisma , Paul Erhart , Malte Selig , Ermin Malic

Van der Waals heterostructures (vdWH) provide an ideal playground for exploring light-matter interactions at the atomic scale. In particular, structures with a type-II band alignment can yield detailed insight into free carrier-to-photon…

材料科学 · 物理学 2017-04-05 Simone Latini , Kirsten T. Winther , Thomas Olsen , Kristian S. Thygesen

Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted…

Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to…

We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…

介观与纳米尺度物理 · 物理学 2018-09-19 A. Chaves , J. G. Azadani , V. Ongun Özçelik , R. Grassi , T. Low

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs)…

介观与纳米尺度物理 · 物理学 2022-06-07 L. H. Fowler-Gerace , Zhiwen Zhou , E. A. Szwed , L. V. Butov

Controlling interlayer excitons in van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies,…

介观与纳米尺度物理 · 物理学 2024-04-09 Lifu Zhang , Ruihao Ni , Liuxin Gu , Ming Xie , Suji Park , Houk Jang , Takashi Taniguchi , Kenji Watanabe , You Zhou

Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs…

介观与纳米尺度物理 · 物理学 2021-10-13 L. H. Fowler-Gerace , D. J. Choksy , L. V. Butov

van der Waals heterostructures consisting of vertically stacked transition-metal dichalcogenides (TMDs) exhibit a rich landscape of bright and dark intra- and interlayer excitons. In spite of a growing literature in this field of research,…

介观与纳米尺度物理 · 物理学 2023-04-17 Joakim Hagel , Samuel Brem , Christopher Linderälv , Paul Erhart , Ermin Malic

Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The…

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in…

介观与纳米尺度物理 · 物理学 2020-02-27 E. V. Calman , L. H. Fowler-Gerace , L. V. Butov , D. E. Nikonov , I. A. Young , S. Hu , A. Mischenko , A. K. Geim

Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission…

介观与纳米尺度物理 · 物理学 2021-10-18 Alberto Ciarrocchi , Dmitrii Unuchek , Ahmet Avsar , Kenji Watanabe , Takashi Taniguchi , Andras Kis

Van der Waals heterostructures of two-dimensional transition metal dichalcogenides provide a unique platform to engineer optoelectronic devices tuning their optical properties via stacking, twisting, or straining. Using ab initio Many-Body…

介观与纳米尺度物理 · 物理学 2025-03-21 R. Reho , A. R. Botello-Méndez , D. Sangalli , M. J. Verstraete , Zeila Zanolli

In addition to its fundamental interest, the long-distance spin transport with suppressed spin losses is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin, limits the spin…

介观与纳米尺度物理 · 物理学 2024-11-05 Zhiwen Zhou , E. A. Szwed , D. J. Choksy , L. H. Fowler-Gerace , L. V. Butov

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to…

介观与纳米尺度物理 · 物理学 2024-07-16 Mauro Brotons-Gisbert , Brian D. Gerardot , Alexander W. Holleitner , Ursula Wurstbauer

Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy…

介观与纳米尺度物理 · 物理学 2017-12-14 Shiyuan Gao , Li Yang , Catalin D. Spataru
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