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相关论文: Evolution between two orbital-selective Mott phase…

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The orbital degrees of freedom are of vital importance in explanation of various phenomena. Among them is the orbital-selective Mott transition (OSMT), which is thought to occur in several materials as Ca$_{2-x}$Sr$_x$RuO$_4$ and…

强关联电子 · 物理学 2015-11-24 E Plekhanov , A Avella , F Mancini , F P Mancini

The anisotropic degenerate two-orbital Hubbard model is studied within dynamical mean-field theory at low temperatures. High-precision calculations on the basis of a refined quantum Monte Carlo (QMC) method reveal that two distinct…

强关联电子 · 物理学 2007-05-23 C. Knecht , N. Blümer , P. G. J. van Dongen

The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…

强关联电子 · 物理学 2014-04-29 Luca de' Medici , Gianluca Giovannetti , Massimo Capone

We investigate the Mott transitions in the two-orbital Hubbard model with different bandwidths. By combining dynamical mean field theory with the exact diagonalization, we discuss the stability of itinerant quasi-particle states in each…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

Multiorbital interactions have the capacity to produce an interesting kind of doublon-holon bound state that consists of a single-hole state in one band and a doubly-occupied state in another band. Interband doublon-holon pair excitations…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Jingyi Liu , Yun Song , Shiping Feng

The electronic states near the Fermi level of recently discovered superconductor Ba$_2$CuO$_{4-\delta}$ consist primarily of the Cu $d_{x^2-y^2}$ and $d_{3z^2-r^2}$ orbitals. We investigate the electronic correlation effect and the orbital…

强关联电子 · 物理学 2021-06-23 Yu Ni , Ya-Min Quan , Jingyi Liu , Yun Song , Liang-Jian Zou

We outline a general mechanism for Orbital-selective Mott transition (OSMT), the coexistence of both itinerant and localized conduction electrons, and show how it can take place in a wide range of realistic situations, even for bands of…

强关联电子 · 物理学 2009-03-24 Luca de' Medici , S. R. Hassan , Massimo Capone , Xi Dai

We study how the electron hopping reduces the Mott-Hubbard band gap in the limit of a large Coulomb interaction U and as a function of the orbital degeneracy N. The results support the conclusion that the hopping contribution grows as…

强关联电子 · 物理学 2009-10-30 Olle Gunnarsson , Erik Koch , Richard M. Martin

Using high-precision quantum Monte Carlo (QMC) simulations within the framework of dynamical mean field theory (DMFT), we show that the anisotropic degenerate two-orbital Hubbard model contains two consecutive orbital-selective Mott…

强关联电子 · 物理学 2007-05-23 P. G. J. van Dongen , C. Knecht , N. Blümer

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

We examine finite-temperature phase transitions in the two-orbital Hubbard model with different bandwidths by means of the dynamical mean-field theory combined with the continuous-time quantum Monte Carlo method. It is found that there…

强关联电子 · 物理学 2015-10-28 Aaram J. Kim , MooYoung Choi , Gun Sang Jeon

Based on the analysis of a two-orbital Hubbard model within a mean-field approach, we propose a mechanism for an orbital selective phase transition (OSPT) where coexistence of localized and itinerant electrons can be realized. We show that…

强关联电子 · 物理学 2012-01-31 Yu-Zhong Zhang , Hunpyo Lee , Hai-Qing Lin , Chang-Qin Wu , Harald O. Jeschke , Roser Valenti

Quantum orbital selective Mott (OSM) transitions are investigated within dynamical mean-field theory based on a two-orbital Hubbard model with different bandwidth at half filling. We find two distinct OSM phases both showing coexistence of…

强关联电子 · 物理学 2018-08-20 Ze-Yi Song , Xiu-Cai Jiang , Hai-Qing Lin , Yu-Zhong Zhang

We investigate the Mott transitions in two-band Hubbard models with different bandwidths. Applying dynamical mean field theory, we discuss the stability of itinerant quasi-particle states in each band. We demonstrate that separate Mott…

强关联电子 · 物理学 2009-11-10 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

We study a three-orbital Hubbard model with negative Hund coupling in infinite dimensions, combining dynamical mean-field theory with continuous time quantum Monte Carlo simulations. This model, which is relevant for the description of…

超导电性 · 物理学 2018-12-13 Kosuke Ishigaki , Joji Nasu , Akihisa Koga , Shintaro Hoshino , Philipp Werner

We investigate the properties of a two-orbital Hubbard model with unequal bandwidths on the square lattice in the framework of the dynamical cluster approximation (DCA) combined with a continuous-time quantum Monte Carlo (CT QMC) algorithm.…

强关联电子 · 物理学 2010-01-25 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti , Hartmut Monien

The orbital-selective electronic behavior is one of the most remarkable manifestations of strong electronic correlations in multi-orbital systems. A prominent example is the orbital-selective Mott transition (OSMT), which is characterized…

强关联电子 · 物理学 2022-08-30 Evgeny A. Stepanov

The orbital-selective Mott phase (OSMP) of multiorbital Hubbard models has been extensively analyzed before using static and dynamical mean-field approximations. In parallel, the properties of Block states (antiferromagnetically coupled…

强关联电子 · 物理学 2014-12-09 Julian Rincon , Adriana Moreo , Gonzalo Alvarez , Elbio Dagotto

In condensed matter physics, various mechanisms give rise to distinct insulating phases. The competition and interplay between these phases remain elusive, even for the seemingly most distinguishable band and Mott insulators. In multilayer…

材料科学 · 物理学 2025-02-14 Zijian Lin , Jie Li , Xiaodong Cao , Jingjing Gao , Xuan Luo , Yuping Sun , Yi Lu , Nanlin Wang , Jiandong Guo , Xuetao Zhu