相关论文: Efficient spin current source using a half-Heusler…
Half-Heusler alloy topological semimetal YPtBi is a promising candidate for an efficient spin source material having both large spin Hall angle ${\theta}$$_{SH}$ and high thermal stability. However, high-quality YPtBi thin films with low…
Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity below a critical temperature T_c = 0.77 K with a zero-temperature upper critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support…
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter…
Since their discovery, topological insulators have been expected to be ideal spintronic materials owing to the spin currents carried by surface states with spin--momentum locking. However, the bulk doping problem remains an obstacle that…
Recent studies on the magneto-transport properties of topological insulators (TI) have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spin-moment…
The giant spin Hall effect (SHE) at room temperature is one of the most attractive feature of topological insulators (TIs) for applications to nano-scale spin devices. Its origin, however, remains a controversial problem. Here, we identify…
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an…
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear…
Over the past decade, topological insulators have received enormous attention for their potential in energy-efficient spin-to-charge conversion, enabled by strong spin-orbit coupling and spin-momentum locked surface states. Despite…
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like…
One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other…
This thesis predicts that two types of material families could be a solution to the challenges in spintronics: complex oxides and bismuth based materials. We derive a general approach for constructing an effective spin-orbit Hamiltonian,…
Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic…
The development of advanced spintronics devices hinges on the efficient generation and utilization of pure spin current. In materials with large spin-orbit coupling, the spin Hall effect may convert charge current to pure spin current and a…
In ultra-thin film of topological insulator, the hybridization between the top and bottom surfaces opens an energy gap and forms two degenerate quantum anomalous Hall states, which give rise to a quantum spin Hall state. In this paper, we…
We report a comprehensive study of the maximization of the spin Hall ratio ({\theta}SH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…