相关论文: Ferromagnetic Negative Charge-Transfer Insulator: …
In this work we study the transport properties of hybrids that consist of exchange biased ferromagnets (FMs) combined with a low-Tc superconductor (SC). Not only different FMs but also various structural topologies have been investigated:…
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable…
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…
Fractional Chern insulators (FCIs) are lattice generalizations of the conventional fractional quantum Hall effect (FQHE) in two-dimensional (2D) electron gases. They typically arise in a 2D lattice without time-reversal symmetry when a…
We propose a "minimal" fractional topological insulator (mFTI), motivated by the recent experimental report on the signatures of FTI at total filling factor $\nu_{\rm tot} = 3$ in a transition metal dichalcogenide moir\'{e} system. The…
We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the…
We consider interacting spinless fermions in one dimension embedded in self-similar quasiperiodic potentials. We examine generalizations of the Fibonacci potential known as precious mean potentials. Using a bosonization technique and a…
A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic…
We review various features of interacting Abelian topological phases of matter in two spatial dimensions, placing particular emphasis on fractional Chern insulators (FCIs) and fractional topological insulators (FTIs). We highlight aspects…
We have investigated the interplay between the metal-insulator transition and ferromagnetism in $({\rm III}_{1-x},{\rm Mn}_x){\rm V}$ ferromagnetic semiconductors. Our study is based on a model in which $S=5/2$ Mn local moments are…
The layered magnetic topological insulator MnBi$_2$Te$_4$ is a promising platform to realize the quantum anomalous Hall effect because its layers possess intrinsic ferromagnetism. However, it is not well understood why the high-spin $d^5$…
Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional magnetic semiconductors have greater…
We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatial inhomogeneity of the system, free-carrier spin…
High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…
The high-temperature ferromagnet MnBi continues to receive attention as a candidate to replace rare-earth-containing permanent magnets in applications above room temperature. This is due to a high Curie temperature, large magnetic moments,…
We discuss the low-energy limit of three-orbital Kondo-lattice and Hubbard models describing $t_{2g}$ orbitals on a triangular lattice near half-filling. We analyze how very flat bands with non-trivial topological character, a Chern number…
We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…
Two-dimensional (2D) intrinsic ferromagnetic (FM) semiconductors are crucial to develop low-dimensional spintronic devices. Using density functional theory, we show that single-layer chromium trihalides (SLCTs) (CrX$_3$,X=F, Cl, Br and I)…
We analyze the distributions of electric potential and field, polarization and charge, and the differential capacitance of a silicon metal-oxide-ferroelectric field effect transistor (MOSFET), in which a gate insulator consists of thin…
By using a realist microscopic model, we study the electric and magnetic properties of the interface between a half metallic manganite and an insulator. We find that the lack of carriers at the interface debilitates the double exchange…