相关论文: Gate-tunable Intrinsic Anomalous Hall Effect in Ep…
Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/bottom gate, a negative AHE loop gradually decreases to zero…
Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)].…
A central theme in condensed matter physics is to create and understand the exotic states of matter by incorporating magnetism into topological materials. One prime example is the quantum anomalous Hall (QAH) state. Recently, MnBi2Te4 has…
The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…
Layer-polarized anomalous Hall effect (LP-AHE) is an attractive phenomenon in condensed-matter physics from the standpoints of both fundamental interest and device applications. The current LP-AHE research is based on the extrinsic paradigm…
Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum…
Van der Waals (vdW) assembly allows controlling symmetry of two-dimensional (2D) materials that determines their physical properties. Especially interesting is the recently demonstrated breaking inversion symmetry by polar layer stacking to…
The quantum anomalous Hall effect in layered antiferromagnet MnBi$_2$Te$_4$ harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic…
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that…
Anomalous Hall effect (AHE) is the key transport signature unlocking topological properties of magnetic materials. While AHE is usually proportional to the magnetization, the nonlinearity suggests the existence of complex magnetic and…
Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial…
To realize the quantum anomalous Hall effect (QAHE) at elevated temperatures, the approach of magnetic proximity effect (MPE) was adopted to break the time-reversal symmetry in the topological insulator (Bi0.3Sb0.7)2Te3 (BST) based…
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetically-doped topological insulators or intrinsic magnetic topological insulator MnBi$_2$Te$_4$ by applying an external magnetic field. However, either the low…
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been…
Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic…
Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall…
Observation of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ flakes is one of the most exciting results in the study of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and related compounds. This fascinating result…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. With the recent discovery of the quantized version of the…
$\mathrm{MnBi_2Te_4}$ has recently been established as an intrinsic antiferromagnetic (AFM) topological insulator and predicted to be an ideal platform to realize quantum anomalous Hall (QAH) insulator and axion insulator states. We…