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Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the…

The electronic properties of the polar interface between insulating oxides is a subject of great current interest. An exciting new development is the observation of robust magnetism at the interface of two non-magnetic materials LaAlO_3…

强关联电子 · 物理学 2013-10-03 Sumilan Banerjee , Onur Erten , Mohit Randeria

The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption…

材料科学 · 物理学 2016-08-31 Clemens J. Foerst , Karlheinz Schwarz , Peter E. Bloechl

A superconducting phase with an extremely low carrier density of the order of 10^13 cm^-2 is present at LaAlO3-SrTiO3 interfaces. If depleted from charge carriers by means of a gate field, this superconducting phase undergoes a transition…

超导电性 · 物理学 2016-02-17 E. Fillis-Tsirakis , C. Richter , J. Mannhart , H. Boschker

Unlike widely explored complex oxide heterostructures grown along [001], the study of [111]-oriented heterointerfaces are very limited thus far. One of the main challenges is to overcome the polar discontinuity that hinders the epitaxy of…

材料科学 · 物理学 2018-02-14 Minhui Hu , Qinghua Zhang , Lin Gu , Qinlin Guo , Yanwei Cao , M. Kareev , J. Chakhalian , Jiandong Guo

Recently a highly ordered Moir\'e dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local…

材料科学 · 物理学 2023-07-25 Chiara Ricca , Elizabeth Skoropata , Marta D. Rossell , Rolf Erni , Urs Staub , Ulrich Aschauer

Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can…

Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature…

超导电性 · 物理学 2022-01-25 Lele Ju , Tianshuang Ren , Zhu Li , Zhongran Liu , Chuanyu Shi , Yuan Liu , Siyuan Hong , Jie Wu , He Tian , Yi Zhou , Yanwu Xie

Metallic LaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, $n_s$, is poorly understood. Here we derive a simple expression for the…

材料科学 · 物理学 2017-09-05 F. Trier , K. V. Reich , D. V. Christensen , Y. Zhang , H. L. Tuller , Y. Z. Chen , B. I. Shklovskii , N. Pryds

We investigate the electronic properties of the LaAlO3/SrTiO3 interface using density functional theory. In contrast to previous studies, which relied on (semi-)local functionals and the GGA+U method, we here use a recently developed hybrid…

强关联电子 · 物理学 2013-07-18 F. Cossu , U. Schwingenschlögl , V. Eyert

Interfaces between transition-metal oxides are able to host two-dimensional electron gases (2DEGs) and exhibit exotic quantum phenomena. Here we report the observation of superconductivity below 230 mK for the heterostructure composed of…

Novel low dimensional quantum phenomena are expected at (110) LaAlO3/SrTiO3 (LAO/STO) interfaces after the quasi two dimensional electron gas similar to that of (001) LAO/STO interfaces was found [G. Herranz et al., Sci. Rep. 2, 758 (2012)…

Scanning superconducting quantum interference device measurements reveal large-scale modulations of the superfluid density and the critical temperature in superconducting Nb, NbN, and underdoped $YBa_{2}Cu_{3}O_{7-{\delta}}$ films deposited…

超导电性 · 物理学 2017-04-26 Shai Wissberg , Beena Kalisky

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104…

Novel electronic systems forming at oxide interfaces comprise a class of new materials with a wide array of potential applications. A high mobility electron system forms at the LaAlO$_3$/SrTiO$_3$ interface and, strikingly, both…

介观与纳米尺度物理 · 物理学 2015-05-13 Lu Li , C. Richter , S. Paetel , T. Kopp , J. Mannhart , R. C. Ashoori

Several experiments reveal the inhomogeneous character of the superconducting state that occurs when the carrier density of the two-dimensional electron gas formed at the LaXO3/SrTiO3 (X=Al or Ti) interface is tuned above a threshold value…

介观与纳米尺度物理 · 物理学 2015-02-27 S. Caprara , D. Bucheli , N. Scopigno , N. Bergeal , J. Biscaras , S. Hurand , J. Lesueur , M. Grilli

We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a…

We have investigated the electrical transport properties of 8 nm thick La0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (STO), and etched into 5 micrometer-wide bridges by Ar-ion etching. We find that even slight overetching of the film…

材料科学 · 物理学 2009-11-13 C. Beekman , I. Komissarov , M. Hesselberth , J. Aarts

Thin films of Topological insulators (TIs) coupled with ferromagnets (FMs) are excellent candidates for energy-efficient spintronics devices. Here, the effect of crystalline structural disorder of TI on interfacial and magnetic properties…

The two-dimensional electron liquid which forms between the band insulators LaAlO3 (LAO) and SrTiO3 (STO) is a promising component for oxide electronics, but the requirement of using single crystal SrTiO3 substrates for the growth limits…