相关论文: Lone pair driven anisotropy in antimony chalcogeni…
The iron-based superconductors are an ideal platform to reveal the enigma of the unconventional superconductivity and potential topological superconductivity. Among them, the monolayer Fe(Se,Te)/SrTiO3(001), which is proposed to be…
The application of semiconductors with optical properties has grown significantly in the development of semiconductor photovoltaics. Here, we explore the electronic and optical properties of ternary transition metal sulfide…
Transition metal dichalcogenides (TMD) monolayers, holding potential as good sunlight absorbers, are promising materials for next-generation optoelectronic devices. They may enable ultrathin photovoltaic(PV) devices thanks to their…
Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The III-VI semiconductor, monoclinic gallium monotelluride…
Quaternary mixed-metal chalcohalides (Sn$_2$BCh$_2$X$_3$) are emerging as promising lead-free perovskite-inspired photovoltaic absorbers. Motivated by recent developments of a first Sn$_2$BCh$_2$X$_3$-based device, we used density…
In the recently discovered V-based kagome superconductors AV$_3$Sb$_5$ (A = K, Rb, and Cs), superconductivity is intertwined with an unconventional charge density wave (CDW) order, raising a fundamental concern on the superconducting gap…
Materials featuring hypervalent bismuth motifs have generated immense interest due to their extraordinary electronic structure and exotic quantum transport. In this study, we synthesized high-quality single crystals of La3ScBi5…
The recently discovered kagome superconductors $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) possess a unique band structure with van Hove singularities and Dirac dispersions, in which unusual charge-density-wave (CDW) orders with time-reversal and…
Two-dimensional (2D) layered materials, transition metal dichalcogenides and black phosphorus, have attracted much interest from the viewpoints of fundamental physics and device applications. The establishment of new functionalities in…
Anisotropic magnetoresistance (AMR) has a crucial feature for developing highly sensitive sensors and innovative memory devices. While extensively studied in bulk materials, AMR effects in these materials are typically weak. Recent…
Transport measurements on the two dimensional electron system in Al2O3 SrTiO3 heterostructures indicate significant noncrystalline anisotropic behavior below T = 30 K. Lattice dislocations in SrTiO3 and interfacial steps are suggested to be…
By means of the first-principles density functional theory (DFT), I2-II-IV-VI4 type Cu-based quaternary chalcogenides Cu 2 XSiS 4 (X = Ge, Sn, and Pb) have been thoroughly investigated. We report the study of Ge and Sn substitution in the…
When passing through a phase transition, electronic system saves energy by opening energy gaps at the Fermi level. Delineating the energy gap anisotropy provides insights into the origin of the interactions that drive the phase transition.…
We study the anisotropy with respect to the local magnetic field of turbulent magnetic fluctuations at magnetofluid scales in the solar wind. Previous measurements in the fast solar wind obtained axisymmetric anisotropy, despite that the…
Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2 and WSe2, are direct band gap semiconductors with large exciton binding energy. They attract growing attentions for opto-electronic applications including solar…
Controlled anisotropic growth of two-dimensional materials provides an approach for the synthesis of large single crystals and nanoribbons, which are promising for applications as low-dimensional semiconductors and in next-generation…
Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness…
Electronic structures for the conduction bands of both hexagonal and orthorhombic LuFeO3 thin films have been measured using x-ray absorption spectroscopy at oxygen K (O K) edge. Dramatic differences in both the spectra shape and the linear…
We analyze the occurrence of in-plane anisotropy in the electronic, magnetic, elastic and transport properties of more than one thousand 2D materials from the C2DB database. We identify hundreds of anisotropic materials and classify them…