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Van der Waals (vdW) heterobilayers formed by two-dimensional (2D) transition metal dichalcogenides (TMDCs) created a promising platform for various electronic and optical properties. ab initio band results indicate that the band offset of…

材料科学 · 物理学 2020-09-04 Yuanyuan Wang , Fengping Li , Wei Wei , Baibiao Huang , Ying Dai

The interactions between different layers in van der Waals heterostructures have a significant impact on the electronic and optical characteristics. By utilizing the intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs),…

材料科学 · 物理学 2024-01-18 Ö. C. Yelgel

Multilayer van der Waals (vdWs) heterostructures assembled by diverse atomically thin layers have demonstrated a wide range of fascinating phenomena and novel applications. Understanding the interlayer coupling and its correlation effect is…

介观与纳米尺度物理 · 物理学 2017-06-26 Liang Xu , Wei-Qing Huang , Wangyu Hu , Bing-Xin Zhou , Anlian Pan , Gui-Fang Huang

Two-dimensional (2D) heterostructures reveal novel physicochemical phenomena at different length scales, that are highly desirable for technological applications. We present a comprehensive density functional theory study of van der Waals…

材料科学 · 物理学 2024-10-21 Kati Asikainen , Matti Alatalo , Marko Huttula , S. Assa Aravindh

The atomic-level vdW heterostructures have been one of the most interesting quantum material systems, due to their exotic physical properties. The interlayer coupling in these systems plays a critical role to realize novel physical…

强关联电子 · 物理学 2021-03-16 Xiaoli Ma , Shaohua Fu , Jianwei Ding , Meng Liu , Ang Bian , Fang Hong , Jia-Tao Sun , Xiaoxian Zhang , Xiaohui Yu , Dawei He

Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered…

Janus MoSSe monolayers were recently synthesised by replacing S by Se on one side of MoS$_2$ (or vice versa for MoSe$_2$). Due to the different electronegativity of S and Se these structures carry a finite out-of-plane dipole moment. As we…

材料科学 · 物理学 2018-10-02 Anders C. Riis-Jensen , Mohnish Pandey , Kristian S. Thygesen

Van der Waals (vdW) heterostructures are receiving great attentions due to their intriguing properties and potentials in many research fields. The flow of charge carriers in vdW heterostructures can be efficiently rectified by the…

介观与纳米尺度物理 · 物理学 2017-04-06 Yang Tan , Xiaobiao Liu , Zhiliang He , Yanran Liu , Mingwen Zhao , Han Zhang , Feng Chen

Two-dimensional (2D) materials viz. transition metal dichalcogenides (TMD) and transition metal oxides (TMO) offer a platform that allows creation of heterostructures with a variety of properties. The optoelectronic industry has observed an…

材料科学 · 物理学 2021-06-07 Arunima Singh , Manjari Jain , Saswata Bhattacharya

Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the…

van der Waals stacking of two-dimensional (2D) materials offers a powerful platform for engineering material interfaces with tailored electronic and optical properties. While most van der Waals multilayers have featured inorganic…

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

Interfacial charge separation and recombination at heterojunctions of monolayer transition metal dichalcogenides (TMDCs) are of interest to two dimensional optoelectronic technologies. These processes can involve large changes in parallel…

材料科学 · 物理学 2017-08-02 Haiming Zhu , Jue Wang , Zizhou Gong , Young Duck Kim , Martin Gustafsson , James Hone , Xiaoyang Zhu

We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing…

材料科学 · 物理学 2020-10-07 W. T. Geng , V. Wang , J. B. Lin , T. Ohno , J. Nara

We perform a comprehensive first-principles study of the electronic properties of van der Waals (vdW) trilayers via intercalating a two-dimensional (2D) monolayer (ML = BN, MoSe2, WS2, or WSe2) between MoS2 bilayer to form various…

介观与纳米尺度物理 · 物理学 2014-03-14 N. Lu , H. Y. Guo , L. Wang , X. J. Wu , X. C. Zeng

We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation…

介观与纳米尺度物理 · 物理学 2023-05-10 Engin Torun , Fulvio Paleari , Milorad V. Milosevic , Ludger Wirtz , Cem Sevik

Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the…

材料科学 · 物理学 2017-07-21 Ying Jia , Teodor K. Stanev , Erik J. Lenferink , Nathaniel P. Stern

We investigate excitons in stacked transition metal dichalcogenide (TMDC) layers under perpendicularly applied electric field, herein MoSe$_2$/WSe$_2$ van der Waals heterostructures. Band structures are obtained with density functional…

介观与纳米尺度物理 · 物理学 2018-09-19 A. Chaves , J. G. Azadani , V. Ongun Özçelik , R. Grassi , T. Low

1T-TaS$_2$ is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling…

Understanding the electronic coupling and energy flow across layered two-dimensional heterostructures (HSs) is crucial to the exploitation of carrier and phonon transports as well as thermal management in next-generation optoelectronic…

介观与纳米尺度物理 · 物理学 2026-05-29 Md. Shaikot Alam Shakil , Ting-Hsuan Wu , Xing He , Abu Montakim Tareq , Zhenjia Zhou , Libo Gao , Naihao Chiang , Ding-Shyue Yang
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