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相关论文: Novel Two-Dimensional Layered MSi$_2$N$_4$ (M = Mo…

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Very recently, a novel two-dimension (2D) MXene, MoSi$_2$N$_4$, was successfully synthesized with excellent ambient stability, high carrier mobility, and moderate band gap (Science 369, 670, 2020). In this work, the intrinsic lattice…

材料科学 · 物理学 2021-03-25 Jihai Yu , Jian Zhou , Xiangang Wan , Qingfang Li

Experimental realization of single-layer MoSi2N4 is among the latest groundbreaking advances in the field of two-dimensional (2D) materials. Inspired by this accomplishment, herein we conduct first-principles calculations to explore the…

The properties of two-dimensional (2D) materials have been extensively studied and applied in various applications. Our interest is to theoretically investigate the thermal transport and thermoelectric properties of the 2D transition metal…

材料科学 · 物理学 2024-02-16 Radityo Wisesa , Anugrah Azhar , Edi Suprayoga

The lattice thermal conductivity ($\kappa$) of newly synthesized two-dimensional (2D) MoSi$_2$N$_4$ family and its associated abnormality is anatomized by $ab$ $initio$ phonon Boltzmann transport calculations. $\kappa$ of MoSi$_2$N$_4$ and…

材料科学 · 物理学 2021-09-13 Yan Yin , Min Yi , Wanlin Guo

Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive…

The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and very popular transition metal di-chalcogenides (TMDC), which…

材料科学 · 物理学 2024-05-16 Chayan Das , Abhishek , Dibyajyoti Saikia , Appala Naidu Gandi , Satyajit Sahu

Recently, the two dimensional complex MA$_2$Z$_4$ structures have been suggested as suitable replacements for silicon channels in field-effect transistors (FETs). Specifically, two materials of MoSi$_2$N$_4$ and WSi$_2$N$_4$ due to their…

材料科学 · 物理学 2023-05-09 Zahra Shomali

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

The two-dimensional M$_2$Z$_4$ materials are proposed as suitable replacements for silicon channels in field-effect transistors (FETs). In the present work, the ThSi$_2$N$_4$ monolayer from the family, with the very appropriate electron…

介观与纳米尺度物理 · 物理学 2025-07-10 Maryam Mirzaei Farshmi , Seyedeh Ameneh Bahadori , Zahra Shomali

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of…

材料科学 · 物理学 2024-12-10 Jun Liu , Mengqi Fang , Eui-Hyeok Yang , Xian Zhang

Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find…

材料科学 · 物理学 2022-03-29 Ghulam Hussain , Mazia Asghar , Muhammad Waqas Iqbal , Hamid Ullah , Carmine Autieri

Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material…

材料科学 · 物理学 2021-02-03 Liemao Cao , Guanghui Zhou , Qianqian Wang , L. K. Ang , Yee Sin Ang

Two-dimensional (2-D) transition metal dichalcogenides (TMDs) have shown numerous interesting physical and chemical properties, making them promising materials for electronic, optoelectronic, and energy applications. Tuning thermal…

材料科学 · 物理学 2016-09-07 Xiaokun Gu , Ronggui Yang

Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice…

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer…

Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the…

In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D…

The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or…

Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal,…

Understanding the thermal properties of two-dimensional (2D) materials and devices is essential for thermal management of 2D applications. Here we perform molecular dynamics simulations to evaluate both the specific heat of $MoS_{2}$ as…

介观与纳米尺度物理 · 物理学 2019-08-02 Saurabh V. Suryavanshi , Alexander J. Gabourie , Amir Barati Farimani , Eric Pop
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