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For L1(0) FePt films, the anomalous Hall resistivity is found to be proportional to spontaneous magnetization $M_{\mathrm{S}}$. After the $M_{\mathrm{S}}$ temperature effect is eliminated, $\rho_{\mathrm{xyo}}$ can be fitted by…

材料科学 · 物理学 2010-04-28 M. Chen , Z. Shi , S. M. Zhou , J. Li , W. J. Xu , X. X. Zhang , J. Du

The low-temperature Hall resistivity \rho_{xy} of La_{2/3}A_{1/3}MnO_3 single crystals (where A stands for Ca, Pb and Ca, or Sr) can be separated into Ordinary and Anomalous contributions, giving rise to Ordinary and Anomalous Hall effects,…

强关联电子 · 物理学 2009-10-31 Y. Lyanda-Geller , S. H. Chun , M. B. Salamon , P. M. Goldbart , P. D. Han , Y. Tomioka , A. Asamitsu , Y. Tokura

The prospect of a Dirac half metal, a material which is characterized by a bandstructure with a gap in one spin channel but a Dirac cone in the other, is of both fundamental interest and a natural candidate for use in spin-polarized current…

强关联电子 · 物理学 2015-11-23 Yuanchang Li , Damien West , Huaqing Huang , Jia Li , S. B. Zhang , Wenhui Duan

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…

介观与纳米尺度物理 · 物理学 2024-05-14 Tonghang Han , Zhengguang Lu , Yuxuan Yao , Jixiang Yang , Junseok Seo , Chiho Yoon , Kenji Watanabe , Takashi Taniguchi , Liang Fu , Fan Zhang , Long Ju

The hybrid perovskites [CH$_3$NH$_3$]Co$_x$Ni$_{x-1}$(HCOO)$_3$ with $x$ = 0, 0.25, 0.5, 0.75 and 1.0 possess multiple phase transitions including incommensurate structures. [CH$_3$NH$_3$]Ni(HCOO)$_3$ has also been found to have a proper…

In a heavy fermion system, there exists the anomalous Hall effect caused by localized $f$-orbital freedom, in addition to the normal Hall effect due to the Lorentz force. In 1994, we found that the Hall coefficient caused by the anomalous…

强关联电子 · 物理学 2009-10-30 Hiroshi Kontani , Morio Miyazawa , Kosaku Yamada

We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror…

介观与纳米尺度物理 · 物理学 2017-06-21 Yafei Ren , Junjie Zeng , Xinzhou Deng , Fei Yang , Hui Pan , Zhenhua Qiao

The interplay of magnetism and topology opens up the possibility for exotic linear response effects, such as the anomalous Hall effect and the anomalous Nernst effect, which can be strongly enhanced by designing a strong Berry curvature in…

材料科学 · 物理学 2020-03-30 Jonathan Noky , Yang Zhang , Claudia Felser , Yan Sun

Following the experimental realization of Quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)$_2$Te$_3$, enhancing the work temperature of QAH effect has emerged as a significant and challenging task. Here we…

材料科学 · 物理学 2025-08-29 Jianqi Zhong , Jianzhou Zhao , Jinyu Zou , Gang Xu

We report the planar and anomalous Nernst effect in epitaxial thin films of spin polarized La2/3Sr1/3MnO3. The thermal counterpart of the anomalous Hall effect in this material (i.e. the anomalous Nernst effect) shows a extreme sensitivity…

材料科学 · 物理学 2014-06-03 Cong Tinh Bui , Francisco Rivadulla

Mn-based antiperovskites that exhibit topological surface states show potential applications in spintronics, magnetoelectronics, and quantum devices owing to the interplay between magnetism and topology. In this family of compounds,…

材料科学 · 物理学 2026-01-07 Sunil Gangwar , C. S. Yadav

We proposed a theory of quantum anomalous Hall effect in a flat-band ferromagnet on a two-dimensional (2D) decorated lattice with spin-orbit coupling. Free electrons on the lattice have dispersionless flat bands, and the ground state is…

介观与纳米尺度物理 · 物理学 2012-02-28 An Zhao , Shun-Qing Shen

Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of…

应用物理 · 物理学 2022-07-18 Rahul Singh , Prashant Singh , Ganesh Balasubramanian

Anharmonic atomic motions can strongly influence the optoelectronic properties of materials but how these effects are connected to the underlying phonon band structure is not understood well. We investigate how the electronic band gap is…

材料科学 · 物理学 2024-06-11 Xiangzhou Zhu , David A. Egger

Layered materials with robust magnetic ordering have been attracting significant research interest. In recent experiments, a new layered material 1$T$-CrTe$_{2}$ has been synthesized and exhibits ferromagnetism above the room temperature.…

材料科学 · 物理学 2021-02-01 Si Li , Shan-Shan Wang , Bo Tai , Weikang Wu , Bin Xiang , Xian-Lei Sheng , Shengyuan A. Yang

Based on density functional theory (DFT) calculations, we predict that a monolayer of OsCl$_3$---a layered material whose interlayer coupling is weaker than in graphite---possesses a quantum anomalous Hall (QAH) insulating phase generated…

强关联电子 · 物理学 2017-05-10 Xian-Lei Sheng , Branislav K. Nikolic

The orthorhombic perovskite SrIrO3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose a novel insulating state. We report results of our…

强关联电子 · 物理学 2016-07-06 H. Zheng , J. Terzic , Feng Ye , X. G. Wan , D. Wang , Jinchen Wang , Xiaoping Wang , P. Schlottmann , S. J. Yuan , G. Cao

Antiferromagnetic antiperovskites, where magnetically active 3$d$ metal cations are placed in the octahedral corners of a perovskite structure, are in the spotlight due to their intertwined magnetic structure and topological properties.…

强关联电子 · 物理学 2023-10-17 J. M. Duran-Pinilla , Aldo H. Romero , A. C. Garcia-Castro

The spin degree of freedom of charge carriers in halide-perovskite semiconductors can be highly useful for information photonics applications. The Faraday effect is known to be the best indicator of paramagnetism of the material and of the…

Halide perovskites are a promising class of materials for optoelectronic and photovoltaic applications, exhibiting high power conversion efficiency due to strong light absorption and long carrier diffusion lengths. While various aspects of…