相关论文: First-principles study of electron transport in Sc…

We analyze the electronic transport through a model spin-1 molecule as a function of temperature, magnetic field and bias voltage. We consider the effect of magnetic anisotropy, which can be generated experimentally by stretching the…

An effective mass based model accounting for the conduction band quantization in a high aspect ratio semiconductor nanotip is developed to describe injected electron transport and subsequent electron emission from the nanotip. A transfer…

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene…

We present results of experimental and theoretical investigations of electron transport through stub-shaped waveguides or electron stub tuners (ESTs) in the ballistic regime. Measurements of the conductance G as a function of voltages,…

Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in…

In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…

We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface…

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport…

We have studied the electronic structure and charge-carrier dynamics of individual single-wall carbon nanotubes (SWNTs) and nanotube ropes using optical and electron-spectroscopic techniques. The electronic structure of semiconducting SWNTs…

The parameter-free computation of charge transport properties of semiconductors is now routine owing to advances in the ab-initio description of the electron-phonon interaction. Many studies focus on the low-field regime in which the…

In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown…

While using first-principles-based Boltzmann transport equation approach to predict the thermal conductivity of crystalline semiconductor materials has been a routine, the validity of the approach is seldom tested for high-temperature…

Quasi-one dimensional electron systems have been created using a suspended helium film on a structured substrate. The electron mobility along the channel is calculated by taking into account the essential scattering processes of electrons…

We performed terahertz magneto-optical spectroscopy of FeSe thin film to elucidate the charge carrier dynamics. The measured diagonal (longitudinal) and off-diagonal (Hall) conductivity spectra are well reproduced by two-carrier Drude…

Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be…

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator Bi$_2$Se$_3$, where the electron-surface optical phonon scattering dominates except at very low temperature. Due…

We present an ab initio inelastic quantum transport approach based on maximally localized Wannier functions. Electronic-structure properties are calculated with density-functional theory in a planewave basis, and electron-vibration coupling…

Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles…

Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…