相关论文: Transition metal impurities in Silicon: Computatio…

With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…

We study quantum corrections to conductivity in a 2D system with a smooth random potential and strong spin-orbit splitting of the spectrum. We show that the interference correction is positive and down to the very low temperature can exceed…

Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions,…

Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are…

We propose a new scalable platform for quantum computing (QC) -- an array of optically trapped symmetric-top molecules (STMs) of the alkaline earth monomethoxide (MOCH$_3$) family. Individual STMs form qubits, and the system is readily…

We present a theoretical study using density functional calculations of the structural, electronic and magnetic properties of 3d transition metal, noble metal and Zn atoms interacting with carbon monovacancies in graphene. We pay special…

Quasiparticles are an intrinsic source of relaxation and decoherence for superconducting qubits. Recent works have shown that normal-metal traps may be used to evacuate quasiparticles, and potentially improve the qubit life time. Here, we…

For the weakly coupled S=1 antiferromagnetic Heisenberg chains on a simple cubic lattice, the effects of magnetic impurities are investigated by the quantum Monte Carlo method with the continuous-time loop algorithm. The transition…

The details of the superconducting to quantum metal transition (SQMT) at T=0 are an open problem that invokes much interest in the nature of this exotic and unexpected ground state1-3. However, the SQMT was not yet investigated in a…

Cobalt-related impurity centers in diamond have been studied using first principles calculations. We computed the symmetry, formation and transition energies, and hyperfine parameters of cobalt impurities in isolated configurations and in…

We study exactly the effect of an impurity in the interacting quantum spin chain at low temperature by solving the integrable spin-1/2 XXZ periodic chain with an impurity through the algebraic and thermal Bethe ansatz methods. In…

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties…

Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic emitter defect complexes from a design standpoint. We show…

In this theoretical work we investigate superexchange, as a means of indirect exchange interaction between two single electron spin qubits, each embedded in a single semiconductor quantum dot (QD). The exchange interaction is mediated by an…

Isolated hydrogen, deuterium, and muonium in diamond have been studied by path-integral molecular dynamics simulations in the canonical ensemble. Finite-temperature properties of these point defects were analyzed in the range from 100 to…

Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we…

The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are…

The split silicon-vacancy defect (SiV) in diamond is an electrically and optically active color center. Recently, it has been shown that this color center is bright and can be detected at the single defect level. In addition, the SiV defect…

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

We propose a coherent mechanical interface between defect centers in diamond and telecom optical modes. Combining recent developments in spin-mechanical devices and optomechanical crystals, we introduce a 1D diamond nanobeam with embedded…