相关论文: Fabry-P\'erot interferometry with gate-tunable 3D …
We propose an intrinsic 3D Fabry-P\'erot type interferometer, coined "higher-order interferometer", that utilizes the chiral hinge states of second-order topological insulators and cannot be equivalently mapped to 2D space because of…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
In three-dimensional topological insulators (3D TI) nanowires, transport occurs via gapless surface states where the spin is fixed perpendicular to the momentum[1-6]. Carriers encircling the surface thus acquire a \pi Berry phase, which is…
We report an observation of a topologically protected transport of surface carriers in a quasi-ballistic Cd3As2 nanowire.The nanowire is thin enough for the spin-textured surface carriers to form 1D subbands, demonstrating conductance…
The discovery of two-dimensional gapless Dirac fermions in graphene and topological insulators (TI) has sparked extensive ongoing research toward applications of their unique electronic properties. The gapless surface states in…
The discovery of three-dimensional (3D) topological insulators opens a gateway to generate unusual phases and particles made of the helical surface electrons, proposing new applications using unusual spin nature. Demonstration of the…
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum…
A topological insulator (TI) nanowire (NW), where the core is insulating and the 2D spin-helical Dirac fermion topological surface states (TSS) are circumferentially quantized into a series of 1D sub-bands, promises novel topological…
The surface of a three dimensional topological insulator (TI) hosts surface states whose properties are determined by a Dirac-like equation. The electronic system on the surface of TI nanowires with polygonal cross-sectional shape adopts…
The three-dimensional (3D) topological insulators (TIs), hosting topologically protected helical surface states, can be promoted into second-order TIs when a diagonal Zeeman term, typical of magnetic doping, is introduced. The latter hosts…
We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual…
Topological insulators have an insulating bulk but a metallic surface. In the simplest case, the surface electronic structure of a 3D topological insulator is described by a single 2D Dirac cone. A single 2D Dirac fermion cannot be realized…
We study Fabry-Perot interference in hybrid devices, each consisting of a mesoscopic superconducting disk deposited on the surface of a three-dimensional topological insulator. Such structures are hypothesized to contain protected zero…
The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic…
In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigate the transport properties in the surface of a 3-dimensional topological insulator-based hybrid structure, where the ferromagnetic and superconducting orders are…
We demonstrated that a triple-gated GaAs quantum point contact, which has an additional surface gate between a pair of split gates to strengthen the lateral confinement, produces the well-defined quantized conductance and Fabry-P\'erot-type…
A p-n junction, an interface between two regions of a material populated with carriers of opposite charge, is a basic building block of solid state electronic devices. From the fundamental physics perspective, it often serves as a tool to…
We show that shaped topological insulator (TI) nanowires, i.e. such that their cross-section radius varies along the wire length, can be tuned into a number of different transport regimes when immersed in a homogeneous coaxial magnetic…
Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one…
Combining the ability to prepare high-quality, intrinsic Bi$_2$Te$_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pronounced, gate-tunable change in transport properties of…