相关论文: Valley two-qubit system in a MoS$_2$-monolayer gat…

The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are…

We report on an experimental study of spin and valley blockade in two-electron bilayer graphene (BLG) double quantum dots (DQDs) and explore the limits set by asymmetric orbitals and electronelectron interactions. The results obtained from…

Bilayer graphene is a promising platform for electrically controllable qubits in a two-dimensional material. Of particular interest is the ability to encode quantum information in the so-called valley degree of freedom, a two-fold orbital…

We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7…

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…

Coherent control and manipulation of quantum degrees of freedom such as spins forms the basis of emerging quantum technologies. In this context, the robust valley degree of freedom and the associated valley pseudospin found in…

The valley degree of freedom in many-valley semiconductors provides a new paradigm for storing and processing information in valleytronic and quantum-computing applications. Achieving practical devices require all-electric control of…

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic…

Spins confined to atomically-thin semiconductors are being actively explored as quantum information carriers. In transition metal dichalcogenides (TMDCs), the hexagonal crystal lattice gives rise to an additional valley degree of freedom…

With the help of the spin-orbit interaction, we propose a scheme to perform holonomic single qubit gates on the electron spin confined to a quantum dot. The manipulation is done in the absence (or presence) of an applied magnetic field. By…

In monolayer transition metal dichalcogenide semiconductors, valley coherence degrades rapidly due to a combination of fast scattering and inter-valley exchange interaction. This leads to a sub-picosecond valley coherence time, making…

The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate…

We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence…

We present a method to enact a deterministic, measurement-free, optically generated controlled-phase gate on two qubits defined by single electrons trapped in large-area quantum dots in a planar microcavity. This method is robust to optical…

We consider a model of two interacting always-on, exchange-only qubits for which controlled phase ($CPHASE$), controlled NOT ($CNOT$), quantum Fourier transform ($QFT$) and $SWAP$ operations can be implemented only in a few electrical…

In the limit of low particle density, electrons confined to a quantum dot form strongly correlated states termed Wigner molecules, in which the Coulomb interaction causes the electrons to become highly localized in space. By using an…

For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 Tesla…