相关论文: Modeling Electrical Resistance Drift with Ultrafas…

As an essential building block for developing a large-scale brain-inspired computing system, we present a highly scalable and energy-efficient artificial neuron device composed of an Ovonic Threshold Switch (OTS) and a few passive…

Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of…

This paper presents a novel compact delay model of Ovonic Threshold Switch (OTS) devices that works efficiently for circuit simulations. The internal state variable of the two terminal devices is estimated using a delay system that uses a…

Passive crossbar arrays based upon memristive devices, at crosspoints, hold great promise for the future high-density and non-volatile memories. The most significant challenge facing memristive device based crossbars today is the problem of…

Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…

Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes…

This paper focuses on the N-k security-constrained optimal transmission switching (OTS) problem for variable renewable energy (VRE) penetrated power grids. A new three-stage stochastic and distributionally robust OTS model is proposed. The…

Artificial Neural Network computation relies on intensive vector-matrix multiplications. Recently, the emerging nonvolatile memory (NVM) crossbar array showed a feasibility of implementing such operations with high energy efficiency, thus…

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

Memristor crossbar arrays have emerged as a key component for next-generation non-volatile memories, artificial neural networks, and analog in-memory computing (IMC) systems. By minimizing data transfer between the processor and memory,…

Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…

Previously, we demonstrated hysteretic and persistent changes of resistivity in two-terminal electronic devices based on charge trapping and detrapping at immobile metastable defects [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys.…

Memristive nanodevices offer new frontiers for computing systems that unite arithmetic and memory operations on-chip. Here, we explore the integration of electrochemical metallization cell (ECM) nanodevices with tunable filamentary…

In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…

Driven by global climate goals, an increasing amount of Renewable Energy Sources (RES) is currently being installed worldwide. Especially in the context of offshore wind integration, hybrid AC/DC grids are considered to be the most…

Transition metal oxides (TMOs) and post-TMOs (PTMOs), when doped with Carbon, show non-volatile current-voltage (I-V) characteristics, which are both universal and repeatable. We have shown spectroscopic evidence of the introduction of…

The ever-increasing demand to extract temporal correlations across sequential data and perform context-based learning in this era of big data has led to the development of long short-term memory (LSTM) networks. Furthermore, there is an…

We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…