相关论文: Optical Tuning of Resistance Switching in Polycrys…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Gallium phosphide (GaP) is an indirect bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties---including large $\chi^{(2)}$ and $\chi^{(3)}$ coefficients, a high refractive index ($>3$),…
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V…
We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors $ > 2.8\times10^{5}$ and mode volumes $< 10 (\lambda/n)^3$, and study their nonlinear and optomechanical properties. For optical intensities up…
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and…
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference…
Resistive switching in amorphous silicon carbide (a-SiC) films deposited by a single composite target magnetron sputtering process is reported. Switching performance as a function of thickness of the films (50, 100 and 300 nm) as well as…
Faithful quantum state transfer between telecom photons and microwave frequency mechanical oscillations necessitate a fast conversion rate and low thermal noise. Two-dimensional (2D) optomechanical crystals (OMCs) are favorable candidates…
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising…
We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)--a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and…
With photoelectrochemical water splitting being one of the most promising approaches for clean energy production and storage, the search for efficient photoelectrode materials is greater than ever. Gallium phosphide (GaP) is a…
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring…
We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion…
Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…
As data-centric computing advances, energy-efficient interconnects are increasingly critical for AI-driven systems. Traditional metal conductors face severe limitations at nanoscale due to increased resistivity from surface scattering. In…
Integration of organic semiconductors into flexible electronics requires that their optoelectronic properties remain stable under mechanical deformation. Among these, the optical band gap governs exciton generation and limits photovoltaic…
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric current on a femtosecond (fs) timescale, holding promise for electronic signal processing at PHz frequencies [Nature 493, 70…
Photonic crystal nanocavities at visible wavelengths are fabricated in a high refractive index (n>3.2) gallium phosphide membrane. The cavities are probed via a cross-polarized reflectivity measurement and show resonances at wavelengths as…
Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities with optical modes volumes close to or below the…
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…