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相关论文: Intrinsic Spin Hall Conductivity Platform in Tripl…

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Spin Hall effect in metallic Pt is studied with first-principles relativistic band calculations. It is found that intrinsic spin Hall conductivity (SHC) is as large as $\sim 2000 (\hbar/e)(\Omega {\rm cm})^{-1}$ at low temperature, and…

介观与纳米尺度物理 · 物理学 2015-05-13 G. Y. Guo , S. Murakami , T. -W. Chen , N. Nagaosa

We study the intrinsic spin Hall conductivity (SHC) in various $5d$-transition metals (Ta, W, Re, Os, Ir, Pt, and Au) and 4d-transition metals (Nb, Mo, Tc, Ru, Rh, Pd, and Ag) based on the Naval Research Laboratory tight-binding model,…

强关联电子 · 物理学 2009-11-13 T. Tanaka , H. Kontani , M. Naito , T. Naito , D. S. Hirashima , K. Yamada , J. Inoue

We report the synthesis and characterization of phase pure Ta3Sb, a material predicted to be topological with eightfold degenerate fermionic states [Science 353, aaf5037 (2016)] and to exhibit a large spin Hall effect [Sci. Adv. 5, eaav8575…

The intrinsic spin Hall conductivity of typical topological insulators Sb$_2$Se$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$, and Bi$_2$Te$_3$ in the bulk form, is calculated from first-principles by using density functional theory and the linear…

材料科学 · 物理学 2020-11-25 S. M. Farzaneh , Shaloo Rakheja

While moir\'e phenomena have been extensively studied in low-carrier-density systems such as graphene and semiconductors, their implications for metallic systems with large Fermi surfaces remain largely unexplored. Using GPU-accelerated…

介观与纳米尺度物理 · 物理学 2025-04-24 Ning Mao , Cheng Xu , Ting Bao , Nikolai Peshcherenko , Claudia Felser , Yang Zhang

We investigate the spin Hall conductivity (SHC) of a composition series of a Ta-Re bcc solid solution. At approximately 60 at.% Ta the Ta-Re alloy features an SHC similar to bcc-W, while both endpoints of the compositional series have…

The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…

The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper…

介观与纳米尺度物理 · 物理学 2009-12-24 P. G. Silvestrov , E. G. Mishchenko

We report a comprehensive study on the intrinsic spin Hall conductivity (SHC) of semimetals MoTe2 and WTe2 by ab initio calculation. Large SHC and desirable spin Hall angles have been discovered, due to the strong spin orbit coupling effect…

材料科学 · 物理学 2019-03-06 Jiaqi Zhou , Junfeng Qiao , Arnaud Bournel , Weisheng Zhao

A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure…

材料科学 · 物理学 2018-01-17 Xuelei Sui , Chong Wang , Jinwoong Kim , Jianfeng Wang , S. H. Rhim , Wenhui Duan , Nicholas Kioussis

We propose to engineer time-reversal-invariant topological insulators in two-dimensional (2D) crystals of transition metal dichalcogenides (TMDCs). We note that, at low doping, semiconducting TMDCs under shear strain will develop…

介观与纳米尺度物理 · 物理学 2014-08-13 M. A. Cazalilla , H. Ochoa , F. Guinea

An {\it ab initio} relativistic band structure calculation of spin Hall conductivity (SHC) ($\sigma_{xy}^z$) in Pd and Au metals has been performed. It is found that at low temperatures, intrinsic SHCs for Pd and Au are, respectively, $\sim…

介观与纳米尺度物理 · 物理学 2016-09-08 G. Y. Guo

We theoretically investigate the spin Hall conductivity (SHC) in topological Dirac semimetals (TDSMs) whose Dirac points are protected by rotational symmetry. On the basis of a general phase diagram of the system with time-reversal,…

介观与纳米尺度物理 · 物理学 2020-06-03 Katsuhsia Taguchi , Daisuke Oshima , Yusuke Yamaguchi , Tatsuki Hashimoto , Yukio Tanaka , Masatoshi Sato

The recent discovery of strong spin Hall effects (SHE) in 2D layered topological semimetals has attracted intensive attention due to its exotic electronic properties and potential applications in spintronic devices. In this paper, we…

材料科学 · 物理学 2023-01-05 Xi Zuo , Yulin Feng , Na Liu , Bing Huang , Desheng Liu , Bin Cui

Quantum spin Hall insulators (QSHIs), also known as two-dimensional topological insulators, have emerged as an unconventional class of quantum states with insulating bulk and conducting edges originating from nontrivial inverted band…

介观与纳米尺度物理 · 物理学 2016-11-11 Takafumi Akiho , François Couëdo , Hiroshi Irie , Kyoichi Suzuki , Koji Onomitsu , Koji Muraki

A general expression for the spin Hall conductivity (SHC) in the s-wave superconducting state at finite temperatures is derived. Based on the expression, we study the SHC in a two-dimensional electron gas model in the presence of Rashba…

介观与纳米尺度物理 · 物理学 2009-11-13 H. Kontani , J. Goryo , D. S. Hirashima

In a topological insulator (TI) the character of electron transport varies from insulating in the interior of the material to metallic near its surface. Unlike, however, ordinary metals, conducting surface states in TIs are topologically…

介观与纳米尺度物理 · 物理学 2013-02-08 G. Tkachov , E. M. Hankiewicz

The discovery that spin-orbit coupling can generate a new state of matter in the form of quantum spin-Hall (QSH) insulators has brought topology to the forefront of condensed matter physics. While QSH states from spin-orbit coupling can be…

强关联电子 · 物理学 2019-06-18 Yuhai Liu , Zhenjiu Wang , Toshihiro Sato , Martin Hohenadler , Chong Wang , Wenan Guo , Fakher F. Assaad

The search for topologically non-trivial states of matter has become an important goal for condensed matter physics. Recently, a new class of topological insulators has been proposed. These topological insulators have an insulating gap in…

介观与纳米尺度物理 · 物理学 2009-11-13 Markus Koenig , Hartmut Buhmann , Laurens W. Molenkamp , Taylor L. Hughes , Chao-Xing Liu , Xiao-Liang Qi , Shou-Cheng Zhang

Quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside insulating bulk gap. Here, by using first-principles calculations, we discover group-IV chalcogenide Si2Te2…

材料科学 · 物理学 2016-11-18 Run-wu Zhang , Wei-xiao Ji , Chang-wen Zhang , Ping Li , Pei-ji Wang
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