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We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of…

介观与纳米尺度物理 · 物理学 2014-01-07 G. S. Diniz , M. R. Guassi , F. Qu

Magnetic topology and its associated emergent phenomena are central to realizing intriguing quantum states and spintronics functionalities. Designing spin textures to achieve strong and distinct electrical responses remains a significant…

We investigate bilayer graphene systems with layer switching domain walls separating the two energetically equivalent Bernal stackings in the presence of an external magnetic field. To this end we calculate quantum transport and local…

材料科学 · 物理学 2021-04-28 N. S. Bassler , K. P. Schmidt

In this work we will focus on the effects produced by topological disorder on the electronic properties of a graphene plane. The presence of this type of disorder induces curvature in the samples of this material, making quite difficult the…

强关联电子 · 物理学 2008-11-26 Alberto Cortijo , María A. H. Vozmediano

The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to…

介观与纳米尺度物理 · 物理学 2021-07-14 Nicolas Moreau , Boris Brun , Sowmya Somanchi , Kenji Watanabe , Takashi Taniguchi , Christoph Stampfer , Benoit Hackens

We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…

介观与纳米尺度物理 · 物理学 2023-09-13 Chiranjit Mondal , Rasoul Ghadimi , Bohm-Jung Yang

Based on the tight-binding model calculations and photonic experimental visualization on graphene, we report the domain-wall-induced gapped topological kink states and topological corner states. In graphene, domain walls with gapless…

介观与纳米尺度物理 · 物理学 2020-05-26 Yuting Yang , Ziyuan Jia , Yijia Wu , Zhi-Hong Hang , Hua Jiang , X. C. Xie

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we…

介观与纳米尺度物理 · 物理学 2013-01-08 I. J. Vera-Marun , P. J. Zomer , A. Veligura , M. H. D. Guimarães , L. Visser , N. Tombros , H. J. van Elferen , U. Zeitler , B. J. van Wees

Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the…

介观与纳米尺度物理 · 物理学 2024-04-30 A. C. McRae , G. Wei , L. Huang , S. Yigen , V. Tayari , A. R. Champagne

We probe quantum Hall effect in a tunable 1-D lateral superlattice (SL) in graphene created using electrostatic gates. Lack of equilibration is observed along edge states formed by electrostatic gates inside the superlattice. We create…

介观与纳米尺度物理 · 物理学 2016-05-03 Sudipta Dubey , Mandar M. Deshmukh

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

The electronic properties of a particular class of domain walls in gapped graphene are investigated. We show that they can support mid-gap states which are localized in the vicinity of the domain wall and propagate along its length. With a…

介观与纳米尺度物理 · 物理学 2015-05-20 G. W. Semenoff , V. Semenoff , Fei Zhou

Low-dimensional electronic systems have traditionally been obtained by electrostatically confining electrons, either in heterostructures or in intrinsically nanoscale materials such as single molecules, nanowires, and graphene. Recently, a…

介观与纳米尺度物理 · 物理学 2014-02-12 A. F. Young , J. D. Sanchez-Yamagishi , B. Hunt , S. H. Choi , K. Watanabe , T. Taniguchi , R. C. Ashoori , P. Jarillo-Herrero

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…

介观与纳米尺度物理 · 物理学 2008-04-14 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Dmitri A. Abanin , Leonid S. Levitov , Philip Kim

Strain has been extensively employed to tailor graphene's properties and has emerged as a powerful tool for engineering gauge fields and exploring fundamental phenomena in artificial platforms like photonic graphene. Here we discover that,…

光学 · 物理学 2025-09-26 Yongsheng Liang , Shiqi Xia , Daohong Song , Hrvoje Buljan , Zhigang Chen

The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant…

Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science…

介观与纳米尺度物理 · 物理学 2012-03-05 Dong-Keun Ki , Hu-Jong Lee

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

Monolayer staggered materials of the graphene family present intrinsic spin-orbit coupling and can be driven through several topological phase transitions using external circularly polarized lasers, and static electric or magnetic fields.…

材料科学 · 物理学 2018-04-25 P. Ledwith , W. J. M. Kort-Kamp , D. A. R. Dalvit

It has recently been shown that signatures of non-Hermitian topology can be realized in a conventional quantum Hall device connected to multiple current sources. These signatures manifest as robust current-voltage characteristics, dictated…

介观与纳米尺度物理 · 物理学 2025-09-22 Raghav Chaturvedi , Viktor Könye , Ewelina M. Hankiewicz , Jeroen van den Brink , Ion Cosma Fulga
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