相关论文: Double Free-Layer Magnetic Tunnel Junctions for Pr…
Brain-inspired learning in physical hardware has enormous potential to learn fast at minimal energy expenditure. One of the characteristics of biological learning systems is their ability to learn in the presence of various noise sources.…
Magnetic tunnel junctions (MTJs) with bcc(001)-type structures such as Fe(001)/MgO(001)/Fe(001), have been widely used as the core of various spintronic devices such as magnetoresistive memories; however, the limited material selection of…
Lateral inhibition is an important functionality in neuromorphic computing, modeled after the biological neuron behavior that a firing neuron deactivates its neighbors belonging to the same layer and prevents them from firing. In most…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a writing technique for voltage-controlled magnetoresistive random access memory (VCMRAM), which is expected to be an ultimate non-volatile memory with ultra-low power…
In double spin filter (SF) tunnel junctions, the spin information is generated and analyzed purely from the SF effect with nonmagnetic electrodes. In this article we numerically evaluate the bias dependence of magnetoresistance in such…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
Ensuring high performance, while meeting the power budget is a challenging task as the world is moving towards next-generation computing. Researchers and designers are in search of new solutions for efficient computation. Spintronics…
Antiferromagnetic Tunnel Junctions (AFMTJs) offer picosecond switching and high integration density for in-memory computing, but their ultrafast dynamics and low tunnel magnetoresistance (TMR) make state-of-the-art MRAM interfaces…
Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable…
CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…
In this paper, we study the domain wall motion induced by vertical current flow in asymmetric magnetic tunnel junctions. The domain wall motion in the free layer is mainly dictated by the current-induced field-like torque acting on it. We…
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally…
In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the…
When fabricating magnetic memories, one of the main challenges is to maintain the bit stability while downscaling. Indeed, for magnetic volumes of a few thousand nm3, the energy barrier between magnetic configurations becomes comparable to…
Neuromorphic computing aims to mimic both the function and structure of biological neural networks to provide artificial intelligence with extreme efficiency. Conventional approaches store synaptic weights in non-volatile memory devices…