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相关论文: Unusually thick metal-insulator domain walls aroun…

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Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments,…

强关联电子 · 物理学 2022-10-05 Tsung-Han Lee , J. Vučičević , D. Tanasković , E. Miranda , V. Dobrosavljević

The resistivity maximum at a temperature $T=T_{\mathrm{max}}$ is a recurring feature of bandwidth-tuned Mott systems, yet its meaning remains controversial: is it a coherence-incoherence crossover of an electronically homogeneous metal, or…

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

1T-TaS$_2$ is a charge-density-wave (CDW) compound with a Mott-insulating ground state. The metallic state obtained by doping, substitution or pulsed charge injection is characterized by an emergent CDW domain wall network, while single…

强关联电子 · 物理学 2019-01-30 Jan Skolimowski , Yaroslav Gerasimenko , Rok Žitko

We discuss the quantum numbers of domain walls of minimal length induced by doping Mott insulators, carefully distinguishing between holon and hole walls. We define a minimal wall hypothesis that uniquely correlates the observed spatial…

凝聚态物理 · 物理学 2009-10-28 Chetan Nayak , Frank Wilczek

Electronic phase separation consisting of the metallic and insulating domains with 50 -- 100 $\mu$m in diameter is found in the organic Mott system $\kappa$-[($h$8-BEDT-TTF)$_{1-x}$($d$8-BEDT-TTF)$_{x}$]$_{2}$Cu[N(CN)$_{2}$]Br by means of…

强关联电子 · 物理学 2007-05-23 T. Sasaki , N. Yoneyama , N. Kobayashi , Y. Ikemoto , H. Kimura

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

Although most metal-insulator transitions in doped insulators are generally viewed as Mott transitions, some systems seem to deviate from this scenario. Alkali metal-ammonia solutions are a brilliant example of that. They reveal a phase…

强关联电子 · 物理学 2009-11-13 Gennady N. Chuev , Pascal Quemerais

The superfluid-Mott insulator transition of spin-2 boson atoms with repulsive interaction in an optical lattice in a magnetic field is presented. By using the mean field theory, Mott ground states and phase diagrams of superfluid-Mott…

软凝聚态物质 · 物理学 2009-11-10 Shuo Jin , Jing-Min Hou , Bing-Hao Xie , Li-Jun Tian , Mo-Lin Ge

We model the dynamics of two species of bosonic atoms trapped in an optical lattice within the Mott regime by mapping the system onto a spin model. A field gradient breaks the cloud into two domains. We study how the domain wall evolves…

量子气体 · 物理学 2015-03-17 Stefan S. Natu , Erich J. Mueller

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

Recently, it has been shown that two dimensional frustrated mixed-spin systems with anisotropic exchange interactions display supersolid phases in their ground state phase diagrams even in the absence of long-range interactions. In this…

应用物理 · 物理学 2020-02-19 F. Heydarinasab , J. Abouie

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

We report the first comprehensive investigation of the organic superconductor (TMTSF)2PF6 in the vicinity of the endpoint of the spin density wave - metal phase transition where phase coexistence occurs. At low temperature, the transition…

Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition…

We generalize the mean-field theory for the spinless Bose-Hubbard model to account for the different types of superfluid phases that can arise in the spin-1 case. In particular, our mean-field theory can distinguish polar and ferromagnetic…

统计力学 · 物理学 2009-11-13 Ramesh V. Pai , K. Sheshadri , Rahul Pandit

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry…

Domain walls in correlated charge density wave compounds such as 1T-TaS2 can have distinct localized states which govern physical properties and functionalities of emerging quantum phases. However, detailed atomic and electronic structures…

材料科学 · 物理学 2023-04-11 Park Jae Whan , Lee Jinwon , Yeom Han Woong

Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially controlling the phase inhomogeneity are still open questions of…

强关联电子 · 物理学 2015-05-13 J. Cao , E. Ertekin , V. Srinivasan , W. Fan , S. Huang , H. Zheng , J. W. L. Yim , D. R. Khanal , D. F. Ogletree , J. C. Grossman , J. Wu
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