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Spin-orbit torque (SOT)-based perpendicularly magnetized memory devices with multistate memory have garnered significant interest due to their applicability in low-power in-memory analog computing. However, current methods are hindered by…

介观与纳米尺度物理 · 物理学 2024-10-08 Raghvendra Posti , Chirag Kalouni , Dhananjay K Tiwari , Debangsu Roy

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

Spin-orbit spin transfer torque allows an efficient control of magnetization by an in-plane current. Recent experiments found that the spin-orbit torque has strong dependence on the magnetization angle [Garello et al., Nature Nanotechnol.…

材料科学 · 物理学 2016-01-20 Seo-Won Lee , Kyung-Jin Lee

Probabilistic inference from real-time input data is becoming increasingly popular and may be one of the potential pathways at enabling cognitive intelligence. As a matter of fact, preliminary research has revealed that stochastic…

新兴技术 · 计算机科学 2017-09-13 Yong Shim , Shuhan Chen , Abhronil Sengupta , Kaushik Roy

We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…

介观与纳米尺度物理 · 物理学 2018-01-09 N. M. Gergs , S. A. Bender , R. A. Duine , D. Schuricht

Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…

介观与纳米尺度物理 · 物理学 2025-11-20 Youjian Chen , Hamed Vakili , Md Golam Morshed , Avik W. Ghosh

In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…

介观与纳米尺度物理 · 物理学 2020-11-19 Jan Hidding , Marcos H. D. Guimarães

Spintronic devices, such as the domain walls and skyrmions, have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. In recent years, spiking neural networks have shown more…

We report a spin-orbit torque(SOT) magnetoresistive random-access memory(MRAM)-based probabilistic binary neural network(PBNN) for resource-saving and hardware noise-tolerant computing applications. With the presence of thermal fluctuation,…

新兴技术 · 计算机科学 2024-03-29 Yu Gu , Puyang Huang , Tianhao Chen , Chenyi Fu , Aitian Chen , Shouzhong Peng , Xixiang Zhang , Xufeng Kou

A large anti-damping spin-obit torque (SOT) efficiency in magnetic heterostructures is a prerequisite to realize energy efficient spin torque based magnetic memories and logic devices. The efficiency can be characterized in terms of the…

Neuromorphic computing (NC) architecture has shown its suitability for energy-efficient computation. Amongst several systems, spin-orbit torque (SOT) based domain wall (DW) devices are one of the most energy-efficient contenders for NC. To…

Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques…

介观与纳米尺度物理 · 物理学 2020-12-02 Vivek P. Amin , Paul M. Haney , Mark D. Stiles

Current-induced spin-orbit torque (SOT) in normal metal/ferromagnet (NM/FM) bilayers bears great promise for technological applications, but the microscopic origin of purely interfacial SOTs in ultra-thin systems is not yet fully…

介观与纳米尺度物理 · 物理学 2023-02-02 Alessandro Veneri , David T. S. Perkins , Aires Ferreira

The use of electric fields applied across magnetic heterojunctions that lack spatial inversion symmetry has been previously proposed as a non-magnetic mean of controlling localized magnetic moments through spin-orbit torques (SOT). The…

介观与纳米尺度物理 · 物理学 2024-09-17 María Camarasa-Gómez , Daniel Hernangómez-Pérez , Ferdinand Evers

The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…

介观与纳米尺度物理 · 物理学 2018-08-22 Rajagopalan Ramaswamy , Jong Min Lee , Kaiming Cai , Hyunsoo Yang

Neuromorphic computing uses brain-inspired principles to design circuits that can perform computational tasks with superior power efficiency to conventional computers. Approaches that use traditional electronic devices to create artificial…

应用物理 · 物理学 2020-07-14 J. Grollier , D. Querlioz , K. Y. Camsari , K. Everschor-Sitte , S. Fukami , M. D. Stiles

In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) devices are leveraged to realize sigmoidal neurons and binarized synapses for a single-cycle analog in-memory computing (IMC) architecture. First, an analog…

新兴技术 · 计算机科学 2020-12-07 Ramtin Zand

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

Spin-orbit torque (SOT) created by a spin current injected into a ferromagnet by an adjacent heavy metal represents an efficient tool for the excitation and manipulation of spin waves. Here we report the micromagnetic simulations describing…

介观与纳米尺度物理 · 物理学 2023-10-20 Andrei I. Nikitchenko , Nikolay A. Pertsev

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of…