相关论文: Continuous nucleation switching driven by spin-orb…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…
Neuromorphic computing has emerged as a promising avenue towards building the next generation of intelligent computing systems. It has been proposed that memristive devices, which exhibit history-dependent conductivity modulation, could…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
Magnetic switching in antiferromagnets relies on Neel spin orbit torque (NSOT), which originates from a current-induced staggered spin polarization of itinerant electrons. In collinear antiferromagnets, such a response requires the spin…
Nanoelectronic devices that mimic the functionality of synapses are a crucial requirement for performing cortical simulations of the brain. In this work we propose a ferromagnet-heavy metal heterostructure that employs spin-orbit torque to…
The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type…
The increasing resource demands of artificial neural networks have prompted the exploration of novel platforms better suited for machine learning. In this context, phase oscillators represent a promising candidate due to their intrinsic…
Knots, characterized by topological invariants called the Hopf number $H$, arise from the intertwining of strings and exhibit diverse configurations. The knot structures have recently been observed in condensed matters, as examplified by a…
While current-induced spin-orbit torques (SOTs) have been extensively studied in ferromagnets and antiferromagnets, ferrimagnets have been less studied. Here we report the presence of enhanced spin-orbit torques resulting from negative…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…
The discovery of spin-orbit torques (SOTs) generated through the spin Hall or Rashba effects provides an alternative write approach for magnetic random-access memory (MRAM), igniting the development of spin-orbitronics in recent years.…
Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($…
Measurements of switching via spin-orbit coupling (SOC) mechanisms are discussed for a pair of inverted Pt/Co/Pt stacks with asymmetrical Pt thicknesses. Taking into account the planar Hall effect contribution, effective fields of…
Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT…
Brain-inspired computing - leveraging neuroscientific principles underpinning the unparalleled efficiency of the brain in solving cognitive tasks - is emerging to be a promising pathway to solve several algorithmic and computational…
Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…
To realize the very objective of spintronics, namely the development of ultra-high frequency and energy-efficient electronic devices, an ultrafast and scalable approach to switch magnetic bits is required. Magnetization switching with spin…
He$^+$ ion irradiation is used to pattern multiple areas of Pt/Co/W films with different irradiation doses in Hall bars. The resulting perpendicular magnetic anisotropy landscape enables selective multilevel current-induced switching, with…
Using orbital angular momentum (OAM) currents in nanoelectronics, for example, for magnetization manipulation via spin-orbit torque (SOT), represents a growing field known as "spin-orbitronics". Here, using the density functional theory…
This study explores the mechanisms of spin-orbit torque (SOT) switching in ferromagnetic semiconductors (FMS) with perpendicular magnetic anisotropy (PMA), emphasizing the impact of symmetry-breaking. Using micromagnetic simulations based…