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Measurements of dc magnetization ($M$) and electrical resistivity ($\rho$) have been carried out as a function of temperature ($T$) for layered oxide Li$_{\rm x}$CoO$_2$ (0.51$\leq$$x$$\leq$1.0) using single crystal specimens. After slow…

强关联电子 · 物理学 2018-11-14 Kiyotaka Miyoshi , Kentaro Manami , Ryo Sasai , Shijo Nishigori , Jun Takeuchi

We have measured the intricate temperature dependence of the Co L2,3 x-ray absorption spectra (2p-3d excitations) of CoO. To allow for accurate total electron yield measurements, the material has been grown in thin film form on a metallic…

强关联电子 · 物理学 2008-06-24 M. W. Haverkort , A. Tanaka , Z. Hu , H. H. Hsieh , H. -J. Lin , C. T. Chen , L. H. Tjeng

Electron energy loss (EEL) spectra have been obtained on materials with the nominal compositions of Na0.33CoO2_yH2O (y = 0, 0.6 and 1.3). Spectral analyses revealed systematic changes in the low-loss energy region (< 10eV) and the core…

超导电性 · 物理学 2007-05-23 J. Q. Li , H. X. Yang , R. J. Xiao , Y. G. Shi , H. R Zhang

Measurements of electrical resistivity ($\rho$), DC magnetization ($M$) and specific heat ($C$) have been performed on layered oxide Li$_x$CoO$_2$ (0.25$\leq$$x$$\leq$0.99) using single crystal specimens. The $\rho$ versus temperature ($T$)…

强关联电子 · 物理学 2015-05-19 K. Miyoshi , C. Iwai , H. Kondo , M. Miura , S. Nishigori , J. Takeuchi

We performed Cu {\it K}-edge X-ray absorption fine structure measurements on T'-type La$_{1.8}$Eu$_{0.2}$CuO$_4$ (LECO) and Nd$_2$CuO$_4$ (NCO) to investigate the variation in the electronic state associated with the emergence of…

We investigate the role of electron correlation and disorder on the electronic structure of layered nickelate (La$_{0.5}$Sr$_{0.5}$)$_2$NiO$_4$ using core level and valence band photoemission spectroscopy in conjunction with density…

强关联电子 · 物理学 2024-04-26 Sakshi Bansal , R. K. Maurya , Asif Ali , B. H. Reddy , Ravi Shankar Singh

The observed correlation of oxygen vacancies and room temperature ferromagnetic ordering in Co doped ZnO1-o nanoparticles reported earlier (Naeem et al Nanotechnology 17, 2675-2680) has been further explored by transport and optical…

材料科学 · 物理学 2007-12-10 M. Naeem , S. K. Hasanain , A. Mumtaz

We have investigated the electronic, vibrational, optical, thermal and piezoelectric properties of LiNbO$_3$, LiTaO$_3$ and Li$_2$NbTaO$_6$ using the first-principles calculation based on the density functional theory. It also shows…

材料科学 · 物理学 2025-03-28 Debidutta Pradhan , Rojalin Swain , Souvagya Kumar Biswal , Jagadish Kumar

The dynamics of the charge ordered (CO) state under non-equilibrium conditions created by strong dc-electric field (~106 V/cm) and photo-illumination with short (~ 6 ns) laser pulses is investigated in Bi1-xCaxMnO3 (x > 0.5) epitaxial…

强关联电子 · 物理学 2007-05-23 S. Chaudhuri , R. C. Budhani

We have grown single crystal samples of Co substituted CaFe2As2 using an FeAs flux and systematically studied the effects of annealing/quenching temperature on the physical properties of these samples. Whereas the as-grown samples (quenched…

超导电性 · 物理学 2015-06-04 S. Ran , S. L. Bud'ko , W. E. Straszheim , J. Soh , M. G. Kim , A. Kreyssig , A. I. Goldman , P. C. Canfield

We have utilized neutron powder diffraction to probe the crystal structure of layered Na$_{x}$CoO$_{2}$ near the half doping composition of $x=$0.46 over the temperature range of 2 to 600K. Our measurements show evidence of a dynamic…

强关联电子 · 物理学 2008-06-16 D. N. Argyriou , O. Prokhnenko , K. Kiefer , C. J. Milne

In this study, we report on investigations of the electronic structure of SrTiO$_3$ annealed at temperature ranging between 550 and 840$^\circ$C in an ultrahigh vacuum. Annealing induced oxygen vacancies (O$_{vac}$) impart considerable…

材料科学 · 物理学 2014-08-18 Prabir Pal , Pramod Kumar , Aswin V. , Anjana Dogra , Amish G. Joshi

We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of…

Electron energy loss spectroscopy (EELS) has been established as a powerful analytical technique for investigating the oxidation state, band structure, and dielectric properties of materials with exceptional spatial resolution. Inspired by…

We present measurements of the optical spectra on Na$_{0.7}$CoO$_2$ single crystals. The optical conductivity shows two broad interband transition peaks at 1.6 eV and 3.2 eV, and a weak midinfrared peak at 0.4 eV. The intraband response of…

超导电性 · 物理学 2009-11-10 N. L. Wang , P. Zheng , D. Wu , Y. C. Ma , T. Xiang , R. Y. Jin , D. Mandrus

The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…

强关联电子 · 物理学 2025-11-11 Nitin Kumar , Nicholas Jerla , John Ponis , Sarbajit Banerjee , G. Sambandamurthy

Electric transport measurements of the charge frustrated LuFe2O4, in which the charge ordering (CO) and electronic ferroelectricity are found, reveal strong nonlinear electric conduction upon application of electrical field in both single…

强关联电子 · 物理学 2009-11-13 L. J. Zeng , H. X. Yang , Y. Zhang , H. F. Tian , C. Ma , Y. B. Qin , Y. G. Zhao , J. Q. Li

A powder X-ray diffraction study, combined with the magnetic susceptibility and electric transport measurements, was performed on a series of LnCoO3 perovskites (Ln = Y, Dy, Gd, Sm, Nd, Pr and La) over a temperature range 100 - 1000 K. A…

材料科学 · 物理学 2010-07-30 K. Knizek , Z. Jirak , J. Hejtmanek , M. Veverka , M. Marysko , G. Maris , T. T. M. Palstra

Magnetism of layered cobaltites Na$_x$CoO$_2$ with $x$ = 0.6 and 0.9 has been investigated by a positive muon spin rotation and relaxation ($\mu^+$SR) spectroscopy together with magnetic susceptibility and specific heat measurements, using…

强关联电子 · 物理学 2009-11-10 J. Sugiyama , J. H. Brewer , E. J. Ansaldo , B. Hitti , M. Mikami , Y. Mori , T. Sasaki

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…

材料科学 · 物理学 2017-03-23 Jin-Sung Kim , Alexei M. Tyryshkin , Stephen A. Lyon
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