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The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising…

Due to its exceptional electronic and thermal properties, graphene is a key material for bolometry, calorimetry, and photon detection. However, despite graphene's relatively simple electronic structure, the physical processes responsible…

We present a comprehensive study on enhancing the thermoelectric (TE) performance of bilayer graphene (BLG) through irradiation with arbitrarily polarized light, focusing on $AA$- and $AB$-stacked configurations with zigzag edges. Utilizing…

介观与纳米尺度物理 · 物理学 2024-09-25 Cynthia Ihuoma Osuala , Tanu Choudhary , Raju K. Biswas , Sudin Ganguly , Santanu K. Maiti

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency…

Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic…

介观与纳米尺度物理 · 物理学 2019-03-08 Lukas Dobusch , Simone Schuler , Vasili Perebeinos , Thomas Mueller

The present Letter proposes a device based on graphene for infrared light emission. It is based on a n- and p-doped monolayer graphene (MGs), with Fermi energies $E_F$ and -$E_F$, respectively, sandwiching a bilayer graphene (BG) with…

介观与纳米尺度物理 · 物理学 2016-08-19 Z. Z. Alisultanov , M. S. Reis

We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical…

介观与纳米尺度物理 · 物理学 2015-06-16 J. F. Sierra , I. Neumann , M. V. Costache , S. O. Valenzuela

Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters…

Graphene---hexagonal-boron-nitride---InSb near-field structures are designed and optimized to enhance the output power and energy efficiency of the thermophotovoltaic systems working in the temperature range of common industrial waste heat,…

应用物理 · 物理学 2019-10-23 Rongqian Wang , Jincheng Lu , Jian-Hua Jiang

We investigate the carrier transport characteristics of perforated graphene layer (PGL) composed of arrays of interdigital coplanar graphene microribbons (GMRs) connected by graphene nanoribbon (GNR) bridges. We analyze their operation at…

介观与纳米尺度物理 · 物理学 2025-03-19 V. Ryzhii , C. Tang , M. Ryzhii , M. S. Shur

Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems…

应用物理 · 物理学 2021-01-27 Rongqian Wang , Jincheng Lu , Jian-Hua Jiang

It is well-known that room temperature ionic liquids (RTILs) often adopt a charge-separated layered structure, i.e., with alternating cation- and anion-rich layers, at electrified interfaces. However, the dynamic response of the layered…

Hexagonal boron nitride (hBN) is a van der Waals semiconductor with a wide bandgap of ~ 5.96 eV. Despite the indirect bandgap characteristics of hBN, charge carriers excited by high energy electrons or photons efficiently emit luminescence…

We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing…

介观与纳米尺度物理 · 物理学 2018-05-07 S. Engels , B. Terrés , F. Klein , S. Reichardt , M. Goldsche , S. Kuhlen , K. Watanabe , T. Taniguchi , C. Stampfer

Increased power density in modern microelectronics has led to thermal management challenges which can cause degradation in performance and reliability. In many high-power electronic devices, the power consumption and heat removal are…

介观与纳米尺度物理 · 物理学 2019-10-01 David B. Brown , Thomas L. Bougher , Xiang Zhang , Pulickel Ajayan , Baratunde A. Cola , Satish Kumar

Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable…

Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation,…

介观与纳米尺度物理 · 物理学 2015-05-20 Victor W. Brar , Michelle C. Sherrott , Luke A. Sweatlock , Min Seok Jang , Laura Kim , Mansoo Choi , Harry A. Atwater

We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimensional electron-hole plasma in uniform graphene layers (GLs)…

介观与纳米尺度物理 · 物理学 2021-07-15 V. Ryzhii , M. Ryzhii , T. Otsuji , V. Leiman , V. Mitin , M. S. Shur

Heterostructures made from van der Waals materials provide a template to investigate proximity effects at atomically sharp heterointerfaces. In particular, near-field charge and energy transfer in heterostructures made from semiconducting…

Optical heating of plasmonic nanostructures is a critical challenge in nanoscale systems. Although plasmonic effects enable enhanced optical functionalities, the associated temperature rise can degrade performance in heat-sensitive…

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