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相关论文: High magnetic field spin-valley-split Shubnikov-de…

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We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically-thin valley semiconductor hosting tightly bound excitons coupled to a dilute system of fully spin- and valley-polarized holes in the presence of…

介观与纳米尺度物理 · 物理学 2019-09-02 T. Smoleński , O. Cotlet , A. Popert , P. Back , Y. Shimazaki , P. Knüppel , N. Dietler , T. Taniguchi , K. Watanabe , M. Kroner , A. Imamoglu

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted…

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and…

We report on quantum magneto-oscillations in an ultra-high mobility GaAs/AlGaAs quantum well at very high tilt angles. Unlike previous studies, we find that the spin and cyclotron splittings become equal over a continuous range of angles,…

介观与纳米尺度物理 · 物理学 2012-08-24 A. T. Hatke , M. A. Zudov , L. N. Pfeiffer , K. W. West

The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of…

We study the Landau level spectrum using a multi-band $\mathbf{k}\cdot\mathbf{p}$ theory in monolayer transition metal dichalcogenide semiconductors. We find that in a wide magnetic field range the Landau levels can be characterized by a…

介观与纳米尺度物理 · 物理学 2015-10-21 Andor Kormanyos , Peter Rakyta , Guido Burkard

We report novel manifestation of the valley splitting for the two valley electron system in (100) Si-inversion layers at low carrier density. We found that valley splitting causes almost 100% modulation of the Shubnikov de Haas oscillations…

强关联电子 · 物理学 2007-05-23 V. M. Pudalov , A. Punnoose , G. Brunthaler , A. Prinz , G. Bauer

Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of two increase of the frequency of Shubnikov-de Haas oscillations at H>H_{sat}. This signals the onset of full spin…

强关联电子 · 物理学 2009-10-31 Sergey A. Vitkalov , Hairong Zheng , K. M. Mertes , M. P. Sarachik , T. M. Klapwijk

We investigate the spin-valley physics (SVP) in MoSe$_2$/WSe$_2$ heterobilayers under external electric field (EF) and changes of the interlayer distance (ID). We analyze the spin ($S_z$) and orbital ($L_z$) degrees of freedom, and the…

介观与纳米尺度物理 · 物理学 2023-04-11 Paulo E. Faria Junior , Jaroslav Fabian

We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up to 12 beating nodes have been observed at magnetic fields between…

介观与纳米尺度物理 · 物理学 2009-11-10 Y. S. Gui , C. R. Becker , N. Dai , J. Liu , Z. J. Qiu , E. G. Novik , M. Schaefer , X. Z. Shu , J. H. Chu , H. Buhmann , L. W. Molenkamp

We present a comprehensive optical study of the excitonic Zeeman effects in transition metal dichalcogenide monolayers, which are discussed comparatively for selected materials: MoSe$_2$, WSe$_2$ and WS$_2$. We introduce a simple…

介观与纳米尺度物理 · 物理学 2018-03-02 M. Koperski , M. R. Molas , A. Arora , K. Nogajewski , M. Bartos , J. Wyzula , D. Vaclavkova , P. Kossacki , M. Potemski

An experimental study of Landau levels (LLs) in a system of two-dimensional massless Dirac fermions based on a critical thickness HgTe quantum well has been carried out. The magnetotransport and the capacitive response have been…

介观与纳米尺度物理 · 物理学 2023-10-17 D. A. Kozlov , J. Ziegler , N. N. Mikhailov , Z. D. Kvon , D. Weiss

Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the…

介观与纳米尺度物理 · 物理学 2015-06-16 A. A. Mitioglu , P. Plochocka , Á. Granados del Aguila , P. C. M. Christianen , G. Deligeorgis , S. Anghel , L. Kulyuk , D. K. Maude

Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has…

介观与纳米尺度物理 · 物理学 2020-01-08 Adam T. Neal , Yuewei Zhang , Said Elhamri , Siddharth Rajan , Shin Mou

Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to…

强关联电子 · 物理学 2009-11-07 S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

We first derive the energy dispersion of bilayer MoS$_{2}$ in the presence of a perpendicular electric field $E_z$. We show that the band gap and layer splitting can be controlled by the field $E_z$. Away from the $k$ point, the intrinsic…

介观与纳米尺度物理 · 物理学 2018-08-29 M. Zubair , M. Tahir , P. Vasilopoulos , K. Sabeeh

The transport properties of a magnetic two dimensional electron gas consisting of a modulation doped n type HgMnTe/HgCdTe quantum well, QW, have been investigated. By analyzing the Shubnikov-de Haas oscillations and the node positions of…

强关联电子 · 物理学 2007-05-23 Y. S. Gui , C. R. Becker , J. Liu , V. Daumer , V. Hock , H. Buhmann , L. W. Molenkamp

Shubnikov-de Haas (SdH) oscillations and magneto-intersubband oscillations of magnetoresistance of structures with single HgTe quantum wells with a width of (10-18) nm have been experimentally studied. The spectrum of the conduction band in…

介观与纳米尺度物理 · 物理学 2024-05-31 G. M. Minkov , O. E. Rut , A. A. Sherstobitov , A. V. Germanenko , S. A. Dvoretski , N. N. Mikhailov

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim…

材料科学 · 物理学 2025-10-31 Julian Max Salchegger , Rajdeep Adhikari , Bogdan Faina , Alberta Bonanni

We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…

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