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相关论文: Low-Temperature Thermopower in CoSbS

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A large, strongly temperature-dependent Nernst coefficient, $\nu$, is observed between $T$ = 2 K and 300 K for CeCu$_2$Si$_2$ and Ce$_{0.8}$La$_{0.2}$Cu$_2$Si$_2$. The enhanced $\nu(T)$ is determined by the asymmetry of the on-site Kondo…

强关联电子 · 物理学 2013-05-30 Peijie Sun , Frank Steglich

We study the thermopower and some related transport quantities due to the orbital Kondo effect in a single quantum dot system with a finite value of Coulomb repulsion by means of the noncrossing approximation applied to the multiorbital…

介观与纳米尺度物理 · 物理学 2007-05-23 Rui Sakano , Tomoko Kita , Norio Kawakami

The band structure of the novel low-temperature thermoelectric material, \CBT, is calculated and analyzed using the semi-classic transport equations. It is shown that to obtain a quantitative agreement with measured transport properties a…

材料科学 · 物理学 2007-05-23 Lars Lykke , Bo B. Iversen , Georg K. H. Madsen

Here, we investigate the thermoelectric properties of the marcasite-type compounds MSb$_2$ (M = Ta, Nb) in the temperature range of 310-730 K. These compounds were synthesized by a solid-state reaction followed by the spark plasma sintering…

材料科学 · 物理学 2024-03-20 Shamim Sk , Naoki Sato , Takao Mori

In recent experiments, high Curie temperatures Tc above room temperature were reported in ferromagnetic semiconductors Fe-doped GaSb and InSb, while low Tc between 20 K to 90 K were observed in some other semiconductors with the same…

材料科学 · 物理学 2020-10-16 Jing-Yang You , Bo Gu , Sadamichi Maekawa , Gang Su

Transport properties in the presence of magnetic fields are numerically studied for the spin-1/2 Heisenberg XXZ chain. The breakdown of the spin-reversal symmetry due to the magnetic field induces the magnetothermal effect. In analogy with…

统计力学 · 物理学 2007-05-23 Shunsuke Furukawa , Dai Ikeda , Kazumitsu Sakai

In this work we present a detailed study and derivation of the thermopower and thermoelectric coefficient of nano-granular metals at large tunneling conductance between the grains, g_T>> 1. An important criterion for the performance of a…

介观与纳米尺度物理 · 物理学 2015-05-13 Andreas Glatz , I. S. Beloborodov

SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of…

介观与纳米尺度物理 · 物理学 2015-02-12 Sangram Biswas , Ramya Nagarajan , Suman Sarkar , Kazi Rafsanjani Amin , M. Ciomaga Hatnean , S. Tewari , G. Balakrishnan , Aveek Bid

The thermoelectric properties of conductors with low electron density can be altered significantly by an applied magnetic field. For example, recent work has shown that Dirac/Weyl semimetals with a single pocket of carriers can exhibit a…

介观与纳米尺度物理 · 物理学 2021-02-08 Xiaozhou Feng , Brian Skinner

The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…

材料科学 · 物理学 2007-05-23 A. Ya. Shul'man , N. A. Mordovets , I. N. Kotel'nikov

Here we investigate the thermodynamic and electronic properties of Eu$_{11}$InSb$_9$ single crystals. Electrical transport data show that Eu$_{11}$InSb$_9$ has a semiconducting ground state with a relatively narrow band gap of $320$~meV.…

强关联电子 · 物理学 2021-07-29 S. S. Fender , S. M. Thomas , F. Ronning , E. D. Bauer , J. D. Thompson , P. F. S. Rosa

Potential applications of quantum dots in the nanotechnology industry make these systems an important field of study in various areas of physics. In particular, thermodynamics has a significant role in technological innovations. With this…

介观与纳米尺度物理 · 物理学 2025-10-28 Luís Fernando C. Pereira , Edilberto O. Silva

We present the thermopower S(T) and the resistivity rho(T) of Lu(1-x)Yb(x)Rh2Si2 in the temperature range 3 K < T < 300 K. S(T) is found to change from two minima for dilute systems (x < 0.5) to a single large minimum in pure YbRh2Si2. A…

强关联电子 · 物理学 2009-11-13 U. Köhler , N. Oeschler , F. Steglich , S. Maquilon , Z. Fisk

Temperature dependence of the magnetic penetration depth, $\lambda$(T), was measured in the Meissner state in single crystals B$_{1-x}$K$_{x}$BiO$_{3}$ (x=0.37) using tunnel diode resonator technique. At low temperatures, $0.013 \le T/T_c…

超导电性 · 物理学 2011-11-09 Alexey Snezhko , Ruslan Prozorov

The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and…

Temperature dependence of thermopower in the multiorbital Hubbard model is studied by using the dynamical mean-field theory with the non-crossing approximation impurity solver. It is found that the Coulomb interaction, the Hund coupling,…

强关联电子 · 物理学 2014-06-19 M. Sekino , S. Okamoto , W. Koshibae , M. Mori , S. Maekawa

In Kondo insulators the many-body Kondo lattice effect drives the formation of bands containing heavy charge carriers with a hybridization gap, leading to insulating properties. These renormalized bands can host non-trivial topologies…

The intermetallic compound ZnSb is an interesting thermoelectric material, largely due to its low lattice thermal conductivity. The origin of the low thermal conductivity has so far been speculative. Using multi-temperature single crystal…

We report a systematic study of Sm valence in the prototypical intermediate valence compound SmB$_6$. Sm mean valence, $v_{\rm Sm}$, was measured by X-ray absorption spectroscopy as functions of pressure ($1<P<13$ GPa) and temperature…

强关联电子 · 物理学 2018-05-09 N. Emi , N. Kawamura , M. Mizumaki , T. Koyama , N. Ishimatsu , G. Pristáš , T. Kagayama , K. Shimizu , Y. Osanai , F. Iga , T. Mito

We report the coexistence of the Kondo effect and spin glass behavior in Fe-doped NbS$_2$ single crystals. The Fe$_x$NbS$_2$ shows the resistance minimum and negative magnetoresistance due to the Kondo effect, and exhibits no…

强关联电子 · 物理学 2020-01-23 H. Nobukane , Y. Tabata , T. Kurosawa , D. Sakabe , S. Tanda