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相关论文: Microscopic evolution of doped Mott insulators fro…

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The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…

强关联电子 · 物理学 2026-02-27 Mingzhong Lu , Yu-Feng Song , Youjin Deng , Yuan-Yao He

Understanding the interplay between charge and spin and its effects on transport is a ubiquitous challenge in quantum many-body systems. In the Fermi-Hubbard model, this interplay is thought to give rise to magnetic polarons, whose dynamics…

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…

强关联电子 · 物理学 2022-08-16 Tianxing Ma , Da Wang , Congjun Wu

Systematic pressure- and temperature-dependent infrared studies on the two-dimensional organic quantum spin-liquid $\beta^{\prime}$-EtMe$_3$Sb[Pd(dmit)$_2$]$_2$ disclose the electronic and lattice evolution across the Mott insulator-metal…

强关联电子 · 物理学 2019-03-27 Weiwu Li , Andrej Pustogow , Reizo Kato , Martin Dressel

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

We establish that a doping-driven first-order metal-to-metal transition, from a pseudogap metal to Fermi Liquid, can occur in correlated quantum materials. Our result is based on the exact Dynamical Mean Field Theory solution of the Dimer…

强关联电子 · 物理学 2021-09-15 L. Fratino , S. Bag , A. Camjayi , M. Civelli , M. J. Rozenberg

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

Polarons are among the most fundamental quasiparticles emerging in interacting many-body systems, forming already at the level of a single mobile dopant. In the context of the two-dimensional Fermi-Hubbard model, such polarons are predicted…

The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

We reinvestigate the bandwidth-control and doping-control Mott transitions (BCMT and DCMT) from a spin liquid Mott insulator to a Fermi liquid metal based on the slave-rotor representation of the Hubbard model,\cite{Florens} where the Mott…

强关联电子 · 物理学 2009-11-11 Ki-Seok Kim

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

Near zero temperature, quantum magnetism can non-trivially arise from short-range interactions, but the occurrence of magnetic order depends crucially on the interplay of interactions, lattice geometry, dimensionality and doping. Even…

量子气体 · 物理学 2017-05-03 J. H. Drewes , L. A. Miller , E. Cocchi , C. F. Chan , D. Pertot , F. Brennecke , M. Köhl

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

The effect of doping in the two-dimensional Hubbard model is studied within finite temperature exact diagonalization combined with cluster dynamical mean field theory. By employing a mixed basis involving cluster sites and bath molecular…

强关联电子 · 物理学 2009-10-29 Ansgar Liebsch , Ning-Hua Tong

We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more…

强关联电子 · 物理学 2025-06-23 Wen O. Wang , Edwin W. Huang , Brian Moritz , Thomas P. Devereaux
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