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Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional…

By means of ab initio calculations and spin-polarized scanning tunneling microscopy experiments we show how to manipulate the local spin-polarization of a ferromagnetic surface by creating a complex energy dependent magnetic structure. We…

Recent studies using Terahertz Time-Domain Spectroscopy (THz-TDS) with spintronic emitters as a source have revealed distinct signatures of the Rashba effect. This effect, which arises from the breaking of inversion symmetry in…

We study the spin polarization induced by a current flow in clean two dimensional electron gases with Rashba spin-orbit coupling. This geometric effect originates from special properties of the electron's scattering at the edges of the…

介观与纳米尺度物理 · 物理学 2007-05-23 A. Reynoso , Gonzalo Usaj , C. A. Balseiro

Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…

介观与纳米尺度物理 · 物理学 2012-01-17 Abraham Slachter , Frank Lennart Bakker , Jean-Paul Adam , Bart Jan van Wees

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…

介观与纳米尺度物理 · 物理学 2018-09-14 R. Lebrun , A. Ross , S. A. Bender , A. Qaiumzadeh , L. Baldrati , J. Cramer , A. Brataas , R. A. Duine , M. Kläui

The manipulation of spin degree of freedom have been demonstrated in spin polarized electron plasma in a heterostructure by using exchange-interaction induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed…

介观与纳米尺度物理 · 物理学 2009-11-13 F. Zhang , H. Z. Zheng , Y. Ji , J. Liu , G. R. Li

Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…

We study the spin polarization of mixed and entangled electron states in a four probe/beam splitter geometry with local Rashba and Dresselhaus interactions. A pair of maximally entangled electrons collides with the beam splitter and enters…

量子物理 · 物理学 2012-12-04 Luis A. González-Árraga , Bertrand Berche , Ernesto Medina

Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic…

材料科学 · 物理学 2024-01-30 Zixu Wang , Zhizhong Chen , Rui Xu , Hanyu Zhu , Ravishankar Sundararaman , Jian Shi

We present the analytical result of the expectation value of spin resulting from an injected spin polarized electron into a semi-infinitely extended 2DEG plane with [001] growth geometry via ideal quantum point contact. Both the Rashba and…

其他凝聚态物理 · 物理学 2007-05-23 Ming-Hao Liu , Ching-Ray Chang , Son-Hsien Chen

One of the major strategies to control magnetism in spintronics is to utilize the coupling between electron spin and its orbital motion. The Rashba and Dresselhaus spin-orbit couplings induce magnetic textures of band electrons called spin…

强关联电子 · 物理学 2019-03-11 Masataka Kawano , Yoshinori Onose , Chisa Hotta

Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The…

Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…

介观与纳米尺度物理 · 物理学 2024-09-19 Rui Peng , Jin Yang , Lin Hu , Wee-Liat Ong , Pin Ho , Chit Siong Lau , Junwei Liu , Yee Sin Ang

Spin caloritronics is the science and technology to control spin, charge, and heat currents in magnetic nanostructures. The spin degree of freedom provides new strategies for thermolelectric power generation that have not yet been fully…

介观与纳米尺度物理 · 物理学 2015-10-09 Adam B. Cahaya , Oleg A. Tretiakov , G. E. W. Bauer

We detected the spin polarization due to charge flow in the spin non-degenerate surface state of a three dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator…

An electrical current can transfer spin angular momentum to a ferromagnet. This novel physical phenomenon, called spin transfer, offers unprecedented spatial and temporal control over the magnetic state of a ferromagnet and has tremendous…

材料科学 · 物理学 2007-05-23 Z. Wei , A. Sharma , A. S. Nunez , P. M. Haney , R. A. Duine , J. Bass , A. H. MacDonald , M. Tsoi

Spin polarization induced by a temperature gradient (heat-current) in a magnetized two-dimensional electron gas (2DEG) with Rashba spin-orbit interaction is considered theoretically within the linear response theory. Using the Matsubara…

介观与纳米尺度物理 · 物理学 2018-08-15 A. Dyrdal , J. Barnas , V. K. Dugaev , J. Berakdar

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

介观与纳米尺度物理 · 物理学 2009-09-25 C. J. Hill , X. Cartoixa , R. A. Beach , D. L. Smith , T. C. McGill