相关论文: Identification of N\'eel vector orientation in ant…
We study current-induced switching of the N\'eel vector in CoO/Pt bilayers to understand the underlaying antiferromagnetic switching mechanism. Surprisingly, we find that for ultra-thin CoO/Pt bilayers electrical pulses along the same path…
Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…
We report the direct observation of switching of the N\'eel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/$\alpha$-Fe$_2$O$_3$ Hall bars using photoemission electron microscopy. Current pulses…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
The understanding of antiferromagnetic domain walls, which are the interface between domains with different N\'eel order orientations, is a crucial aspect to enable the use of antiferromagnetic materials as active elements in future…
Efficient control of antiferromagnetic (AFM) domain switching in thin films is vital for advancing antiferromagnet-based memory devices. In this study, we directly observed the current-driven switching process of CoO AFM domains in the…
As electrical control of N\'eel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to…
The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the…
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…
Quantitative investigation on the current-induced torque in antiferromagnets represents a great challenge, due to the lack of an independent method for controlling N\'eel vectors. Here by utilizing an antiferromagnetic insulator with…
Antiferromagnets exhibit distinctive characteristics such as ultrafast dynamics and robustness against perturbative fields, thereby attracting considerable interest in fundamental physics and technological applications. Recently, it was…
One of the most important challenges in antiferromagnetic spintronics is the read-out of the N\'eel vector state. High current densities up to 10$^8$ Acm$^{-2}$ used in the electrical switching experiments cause notorious difficulty in…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
We demonstrate how the antiferromagnetic order in heterostructures of NiO/Pt thin films can be modified by optical pulses. We irradiate our samples with laser light and identify an optically induced creation of antiferromagnetic domains by…
In this work, we investigate the steady propagation of 180-degree domain walls (180DWs) of N\'{e}el vectors in thin antiferromagnetic strips under perpendicularly injected spin currents with various polarization orientations. Our results…
The absence of stray fields, their insensitivity to external magnetic fields, and ultrafast dynamics make antiferromagnets promising candidates for active elements in spintronic devices. Here, we demonstrate manipulation of the N\'{e}el…
We demonstrate all-optical manipulation of magnetic domains in NiO/Pt and CoO/Pt thin films with insulating antiferromagnetic layers. Using magneto-optical birefringence imaging, we show that even a single laser pulse can thermally…
Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the N\'eel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise…