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Hypothetical metals having optical absorption losses as low as those of the transparent insulators, if found, could revolutionize optoelectronics. We perform the first high-throughput search for lossless metals among all known inorganic…

材料科学 · 物理学 2022-07-14 Xiaolei Hu , Zhengran Wu , Zhilin Li , Qiunan Xu , Kun Chen , Kui Jin , Hongming Weng , Ling Lu

We determine numerically the ground state of the two-dimensional, fully polarized electron gas within the Hartree-Fock approximation without imposing any particular symmetries on the solutions. At low electronic densities, the Wigner…

强关联电子 · 物理学 2014-03-04 B. Bernu , F. Delyon , M. Duneau , M. Holzmann

In correlated electron systems the metallic character of a material can be strongly suppressed near an integer concentration of conduction electrons as Coulomb interactions forbid the double occupancy of local atomic orbitals. While the…

强关联电子 · 物理学 2021-05-19 Katherine Driscoll , Arnaud Ralko , Simone Fratini

Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all…

介观与纳米尺度物理 · 物理学 2015-05-27 M. S. Osofsky , S. C. Hernández , A. Nath , V. D. Wheeler , S. Walton , C. M. Krowne , D. K. Gaskill

We present a way to quantum-disorder a pair density wave, and propose it to be a candidate of the effective low-energy description of the pseudogap metal which may reveal itself in a sufficiently high magnetic field that suppresses the…

强关联电子 · 物理学 2020-02-12 Zhehao Dai , T. Senthil , Patrick A. Lee

We review recent experimental results on the metal-insulator transition and low-density phases in strongly-interacting, low-disordered Si-based two-dimensional electron systems. Special attention is given to the metallic state in…

强关联电子 · 物理学 2021-12-13 A. A. Shashkin , S. V. Kravchenko

We show that when graphene monolayers are disordered, the conductance exhibits a metallic-to-insulating transition, which opens the door to new electronic devices. The transition can be observed by driving the density or Fermi energy…

无序系统与神经网络 · 物理学 2009-12-07 M. Hilke

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…

强关联电子 · 物理学 2009-10-31 Junren Shi , X. C. Xie

Recent experiments on the two dimensional electron gas in various semiconductor devices have revealed an unexpected metal-insulator transition and have challenged the previously held assumption that there is no such transition in two…

强关联电子 · 物理学 2017-02-08 Sudip Chakravarty , Steven Kivelson , Chetan Nayak , Klaus Voelker

Density-functional Theory (DFT) approaches have recently been used to judge the topological order of various materials despite its well-known band gap underestimation. Use of the more accurate quasi-particle GW approach reveals here few…

材料科学 · 物理学 2015-05-27 Julien Vidal , Xiuwen Zhang , Liping Yu , Jun-Wei Luo , Alex Zunger

Twisted transition metal dichalcogenides are a new platform for realizing strongly correlated physics with high tunability. Recent transport experiments [A. Ghiotto et al. Nature 597, 345 (2021)] have reported the bandwidth-driven evolution…

强关联电子 · 物理学 2026-01-08 Yong-Yue Zong , Zhao-Long Gu , Jian-Xin Li

We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

We extend the Gossamer technique recently proposed to describe superconducting ground states to metallic ground states. The gossamer metal in a single band model will describe a metallic phase that becomes arbitrarily hard to differentiate…

强关联电子 · 物理学 2007-05-23 George Chapline , Zaira Nazario , David I. Santiago

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

Compressed hydrogen passes through a series of layered structures in which the layers can be viewed as distorted graphene sheets. The electronic structures of these layered structures can be understood by studying simple model systems- an…

材料科学 · 物理学 2013-05-22 Ivan I. Naumov , R. E. Cohen , Russell J. Hemley

We propose a new state of matter in which the pairing interactions carve out a gap within the interior of a large Fermi ball, while the exterior surface remains gapless. This defines a system which contains both a superfluid and a normal…

超导电性 · 物理学 2009-11-07 W. Vincent Liu , Frank Wilczek

The theory for disordered itinerant ferromagnets developed in a previous paper is used to construct a simple effective field theory that is capable of describing the quantum phase transition from a ferromagnetic metal to a ferromagnetic…

统计力学 · 物理学 2009-10-31 T. R. Kirkpatrick , D. Belitz

In this review, We discussed the theoretical foundation and experimental discovery of different topological electronic states of material in condensed matter. At first, we briefly reviewed the conventional electronic states, which have been…

材料科学 · 物理学 2020-11-30 Arnab Kumar Pariari

The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…

无序系统与神经网络 · 物理学 2007-05-23 Yu. V. Tarasov

Topological insulators are new states of quantum matter which can not be adiabatically connected to conventional insulators and semiconductors. They are characterized by a full insulating gap in the bulk and gapless edge or surface states…

介观与纳米尺度物理 · 物理学 2011-11-09 Xiao-Liang Qi , Shou-Cheng Zhang