中文
相关论文

相关论文: Direct measurement of electron intervalley relaxat…

200 篇论文

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…

介观与纳米尺度物理 · 物理学 2013-07-01 C. H. Yang , A. Rossi , R. Ruskov , N. S. Lai , F. A. Mohiyaddin , S. Lee , C. Tahan , G. Klimeck , A. Morello , A. S. Dzurak

We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…

介观与纳米尺度物理 · 物理学 2021-09-01 Amin Hosseinkhani , Guido Burkard

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…

介观与纳米尺度物理 · 物理学 2014-02-12 Charles Tahan , Robert Joynt

Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…

介观与纳米尺度物理 · 物理学 2021-05-05 F. Borjans , X. Zhang , X. Mi , G. Cheng , N. Yao , C. A. C. Jackson , L. F. Edge , J. R. Petta

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…

介观与纳米尺度物理 · 物理学 2023-03-27 Xinxin Cai , Elliot J. Connors , John M. Nichol

Valley-orbit coupling is a key parameter for a silicon quantum dot in determining its suitability for applications in quantum information processing. In this paper we study the effect of interface steps on the magnitude and phase of…

介观与纳米尺度物理 · 物理学 2019-10-02 Bilal Tariq , Xuedong Hu

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the…

介观与纳米尺度物理 · 物理学 2015-05-18 Dimitrie Culcer , Lukasz Cywinski , Qiuzi Li , Xuedong Hu , S. Das Sarma

We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…

介观与纳米尺度物理 · 物理学 2014-12-24 Peihao Huang , Xuedong Hu

While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…

Spin and valley-orbit splittings are calculated in SiGe/Si/SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with…

介观与纳米尺度物理 · 物理学 2008-10-07 M. O. Nestoklon , L. E. Golub , E. L. Ivchenko

In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as…

介观与纳米尺度物理 · 物理学 2020-11-11 Amin Hosseinkhani , Guido Burkard

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that…

Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…

介观与纳米尺度物理 · 物理学 2015-03-13 Mark Friesen , S. N. Coppersmith

We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…

介观与纳米尺度物理 · 物理学 2014-08-27 K. Wang , C. Payette , Y. Dovzhenko , P. W. Deelman , J. R. Petta

We investigate the effect of the valley degree of freedom on Pauli-spin blockade readout of spin qubits in silicon. The valley splitting energy sets the singlet-triplet splitting and thereby constrains the detuning range. The valley phase…

介观与纳米尺度物理 · 物理学 2018-06-20 M. L. V. Tagliaferri , P. L. Bavdaz , W. Huang , A. S. Dzurak , D. Culcer , M. Veldhorst

The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…

介观与纳米尺度物理 · 物理学 2022-01-25 Donovan Buterakos , Sankar Das Sarma

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…

‹ 上一页 1 2 3 10 下一页 ›