相关论文: Tunable Four-Wave Mixing in AlGaAs Waveguides of T…
We experimentally demonstrate enhanced wavelength conversion in a Q=7500 deeply etched AlGaAs-nanowaveguide microresonator via degenerate continuous-wave four-wave mixing with a pump power of 24 mW. The maximum conversion efficiency is -43…
Nonlinear absorption can limit the efficiency of nonlinear optical devices. However, it can also be exploited for optical limiting or switching applications. Thus, characterization of nonlinear absorption in photonic devices is imperative.…
We study topologically-protected four-wave mixing (FWM) interactions in a plasmonic metasurface consisting of a periodic array of nanoholes in a graphene sheet, which exhibits a wide topological bandgap at terahertz frequencies upon the…
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass…
The recent development of devices based on novel nonlinear materials like chalcogenides (ChGs), silicon (Si) and other semi-conductors has revolutionized the field of nonlinear photonics [1,2,3]. Among the nonlinear effects observed in…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
Optical amplification is critical for optical signal transmission. While the emergence of erbium-doped fiber amplifiers has revolutionized optical communications in fiber-based systems, on-chip amplification remains essential for integrated…
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…
We demonstrate enhanced four-wave mixing (FWM) in doped silica waveguides integrated with graphene oxide (GO) layers. Owing to strong mode overlap between the integrated waveguides and GO films that have a high Kerr nonlinearity and low…
We have analyzed a five-level $\wedge$-configuration Four-Wave Mixing (FWM) scheme for obtaining a high-efficiency FWM based on the two electromagnetically induced transparency. We find that the maximum FWM efficiency is nearly 30%, which…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…
The non-destructive characterization of nanoscale devices, such as those based on semiconductor nanowires, in terms of functional potentials is crucial for correlating device properties with their morphological/materials features, as well…
We experimentally demonstrate wide-band (>100 THz) frequency down-conversion of near-infrared (NIR) femtosecond-scale pulses from an Er:fiber laser to the mid-infrared (MIR) using four-wave-mixing (FWM) in photonic-chip silicon-nitride…
A reconfigurable millimeter-wave artificial waveguide using glide-symmetric pin-like contact-less metasurfaces is proposed in order to enable low loss and high-power-handling capability in switching operations. Thanks to the remarkable…
We present a theoretical analysis supported by comprehensive numerical simulations of quasi phase-matched four-wave mixing (FWM) of ultrashort optical pulses that propagate in weakly width-modulated silicon photonic nanowire gratings. Our…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
We report on the study of the third-order nonlinear optical interactions in In$_{x}$Ga$_{1-x}$As$_{y}$P$_{1-y}$/InP strip-loaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical…
We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave mixing Bragg scattering in silicon nitride waveguides is…
The realization of a scalable quantum internet requires efficient light-matter interfaces that map stationary qubits onto photonic carriers for long-distance transmission. A central challenge is the generation of entangled photons…