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In the first three years since the discovery of Fe-based high Tc superconductors, scanning tunneling microscopy (STM) and spectroscopy have shed light on three important questions. First, STM has demonstrated the complexity of the pairing…

超导电性 · 物理学 2015-03-19 Jennifer E. Hoffman

Efficient thermal management is critical for cryogenic CMOS circuits, where local heating can compromise device performance and qubit coherence. Understanding heat flow at the nanoscale in these multilayer architectures requires localized,…

The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning tunneling microscopy at low temperature. Shallow acceptors are known to exhibit distinct triangular contrasts in STM images for certain bias…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Loth , M. Wenderoth , R. G. Ulbrich , S. Malzer , G. H. Döhler

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…

介观与纳米尺度物理 · 物理学 2016-07-26 Di Wu , Xiao Li , Lan Luan , Xiaoyu Wu , Wei Li , Maruthi N. Yogeesh , Rudresh Ghosh , Zhaodong Chu , Deji Akinwande , Qian Niu , Keji Lai

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects…

材料科学 · 物理学 2017-03-23 Jin-Sung Kim , Alexei M. Tyryshkin , Stephen A. Lyon

Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a sample, four-point resistance measurements can be performed in…

介观与纳米尺度物理 · 物理学 2022-01-28 A. Leis , V. Cherepanov , B. Voigtländer , F. S. Tautz

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…

材料科学 · 物理学 2013-03-05 Han Liu , Adam T. Neal , Peide D. Ye

Transition metal dichalcogenides (TMDs) attract significant attention as potential building blocks in next-generation electronic devices. On the other hand, a comprehensive understanding of how various defects affect local electronic…

材料科学 · 物理学 2026-04-28 Joshua R. Evans , Diego A. Garibay , Aiden N. Kuhls , Mehmet Z. Baykara

Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has…

The discovery of superconductivity in the quantum critical Kondo-lattice system YbRh2Si2 at an extremely low temperature of 2 mK has inspired efforts to perform high-resolution electrical resistivity measurements down to this temperature…

The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…

介观与纳米尺度物理 · 物理学 2019-02-15 Wushi Dong , Peter B. Littlewood

Materials with reduced dimensionality offer beneficial density-of-states (DOS) profiles for thermoelectric energy conversion, but can be impractical in realistic devices. Encouragingly, bulk high-symmetry materials can also exhibit similar…

材料科学 · 物理学 2026-03-10 Øven A. Grimenes , Ole M. Løvvik , Kristian Berland

Understanding the ultra-fast transport properties of hot charge carriers is of significant importance both fundamentally and technically in applications like solar cells and transistors. However, direct measurement of charge transport at…

化学物理 · 物理学 2022-08-10 Peter A. Sloan , Kristina R. Rusimova

Scanning transmission electron microscopy (STEM) has advanced rapidly in the last decade thanks to the ability to correct the major aberrations of the probe forming lens. Now atomic-sized beams are routine, even at accelerating voltages as…

Vortices play a crucial role in determining the properties of superconductors as well as their applications. Therefore, characterization and manipulation of vortices, especially at the single vortex level, is of great importance. Among many…

Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface…

Scanning tunneling microscope (STM) is a powerful tool for studying the structural and electronic properties of materials at the atomic scale. The combination of low temperature and high magnetic field for STM and related spectroscopy…

Topology is a central notion in the classification of band insulators and characterization of entangled many-body quantum states. In some cases, it manifests as quantized observables such as quantum Hall conductance. However, being…

强关联电子 · 物理学 2022-08-26 Sangjin Lee , Kyung-Hwan Jin , Byungmin Kang , B. J. Kim , Gil Young Cho

Using realistic multi-orbital tight-binding Hamiltonians and the T-matrix formalism, we explore the effects of a non-magnetic impurity on the local density of states in Fe-based compounds. We show that scanning tunneling spectroscopy (STS)…

超导电性 · 物理学 2013-12-03 N. Plonka , A. F. Kemper , S. Graser , A. P. Kampf , T. P. Devereaux

When semiconducting transition metal dichalcogenides heterostructures are stacked the twist angle and lattice mismatch leads to a periodic moir\'e potential. As the angle between the layers changes, so do the electronic properties. As the…